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Paper Abstract and Keywords
Presentation 2009-04-24 09:25
Fabrication of a Room-temperature Operation Single Electron Transistor through Anodization Process
Yasuo Kimura, Takami Muto, Michio Niwano (Tohoku Univ.) ED2009-9
Abstract (in Japanese) (See Japanese page) 
(in English) In order to fabricate single-electron transistors which can operate at room temperature, it is necessary to arrange a several nanometer nanodot between source and drain electrodes. Therefore, it is important to develop new hybrid processes between top-down and bottom-up processes. In this study, we fabricated single-electron transistors through both anodization process of aluminum and the photolithography technique and demonstrated that it could be operate at room temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) single electron transistor / room-temperature operation / anodization / porous alumina / selfalignment / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 16, ED2009-9, pp. 35-38, April 2009.
Paper # ED2009-9 
Date of Issue 2009-04-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-9

Conference Information
Committee ED  
Conference Date 2009-04-23 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT, etc 
Paper Information
Registration To ED 
Conference Code 2009-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of a Room-temperature Operation Single Electron Transistor through Anodization Process 
Sub Title (in English)  
Keyword(1) single electron transistor  
Keyword(2) room-temperature operation  
Keyword(3) anodization  
Keyword(4) porous alumina  
Keyword(5) selfalignment  
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Keyword(7)  
Keyword(8)  
1st Author's Name Yasuo Kimura  
1st Author's Affiliation Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Tohoku Univ.)
2nd Author's Name Takami Muto  
2nd Author's Affiliation Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Tohoku Univ.)
3rd Author's Name Michio Niwano  
3rd Author's Affiliation Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2009-04-24 09:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-9 
Volume (vol) vol.109 
Number (no) no.16 
Page pp.35-38 
#Pages 4 
Date of Issue 2009-04-16 (ED) 

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