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Paper Abstract and Keywords
Presentation 2009-04-24 09:50
Graphene-on-silicon (GOS) technology for formation of high-mobility ultrathin channel layer on Si substrate
Hiroyuki Handa, Yu Miyamoto, Eiji Saito, Hirokazu Fukidome, Takashi Ito (Tohoku Univ.), Maki Suemitsu (Tohoku Univ./JST) ED2009-10
Abstract (in Japanese) (See Japanese page) 
(in English) With its industrial adaptability, epitaxial graphene, a graphene film formed by UHV annealing of SiC bulk substrates, is attracting recent attention. Still, a growth technique that allows formation of graphene films on Si substrates is strongly demanded when we want to utilize graphene as a post-CMOS material. To this goal, we have developed a growth technique of graphene on Si substrates by using an epitaxial film of 3C-SiC formed by organosilane gas-source MBE and its subsequent surface modification.
Keyword (in Japanese) (See Japanese page) 
(in English) Graphene / Si / 3C-SiC / Organosilane / Gas-source MBE / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 16, ED2009-10, pp. 39-43, April 2009.
Paper # ED2009-10 
Date of Issue 2009-04-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-10

Conference Information
Committee ED  
Conference Date 2009-04-23 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT, etc 
Paper Information
Registration To ED 
Conference Code 2009-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Graphene-on-silicon (GOS) technology for formation of high-mobility ultrathin channel layer on Si substrate 
Sub Title (in English)  
Keyword(1) Graphene  
Keyword(2) Si  
Keyword(3) 3C-SiC  
Keyword(4) Organosilane  
Keyword(5) Gas-source MBE  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroyuki Handa  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yu Miyamoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Eiji Saito  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Hirokazu Fukidome  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Takashi Ito  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Maki Suemitsu  
6th Author's Affiliation Tohoku University/JST (Tohoku Univ./JST)
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Speaker Author-1 
Date Time 2009-04-24 09:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-10 
Volume (vol) vol.109 
Number (no) no.16 
Page pp.39-43 
#Pages 5 
Date of Issue 2009-04-16 (ED) 

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