Paper Abstract and Keywords |
Presentation |
2009-04-24 13:00
Real-time monitoring of the growth of 3C-SiC films on Si substrate with pyrometric interferometry Eiji Saito, Maki Suemitsu (Tohoku Univ.) ED2009-14 Link to ES Tech. Rep. Archives: ED2009-14 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
“Temperature oscillation” is observed during growth of 3C-SiC on Si substrate using monomethyl-silane when the temperature is monitored with a monochromatic pyrometer. The oscillation is caused by the infrared light interference between the surface and the film/substrate interface. The period of the oscillation corresponds to /2n, with the  and n being the wavelength used in the monochromatic optical pyrometer and the refractive index of the grown film, respectively. The decay of the oscillation is caused by roughening of the surface. Pyrometric interferometry provides a feasible tool for real-time monitoring of the growth of 3C-SiC film on Si substrates. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
3C-SiC / Si / monomethyl-silane / pyrometric interferometry / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 16, ED2009-14, pp. 59-61, April 2009. |
Paper # |
ED2009-14 |
Date of Issue |
2009-04-16 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-14 Link to ES Tech. Rep. Archives: ED2009-14 |
Conference Information |
Committee |
ED |
Conference Date |
2009-04-23 - 2009-04-24 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
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TFT, etc |
Paper Information |
Registration To |
ED |
Conference Code |
2009-04-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Real-time monitoring of the growth of 3C-SiC films on Si substrate with pyrometric interferometry |
Sub Title (in English) |
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3C-SiC |
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Si |
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monomethyl-silane |
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pyrometric interferometry |
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1st Author's Name |
Eiji Saito |
1st Author's Affiliation |
Tohoku University (Tohoku Univ.) |
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Maki Suemitsu |
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Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-04-24 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2009-14 |
Volume (vol) |
vol.109 |
Number (no) |
no.16 |
Page |
pp.59-61 |
#Pages |
3 |
Date of Issue |
2009-04-16 (ED) |