Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2009-04-24 13:25
Growth of polycrystalline Si on plastic substrate using pulsed-plasma CVD under near atmospheric Pressure
Shogo Murashige, Mitsutaka Matsumoto, Yohei Inayoshi, Maki Suemitsu (Tohoku Univ.), Setsuo Nakajima, Tsuyoshi Uehara (Sekisui Chemicals Co. Ltd), Yasutake Toyoshima (AIST-ETRI) ED2009-15
Abstract (in Japanese) (See Japanese page) 
(in English) Polycrystalline Si films have been deposited on polyethylene terephthalate(PET) substrates using pulsed-plasma CVD under normal pressures. Crystalline structure of the Si films was evaluated by Raman scattering spectroscopy and transmission electron microscopy (TEM). The poly-Si film shows a high crystallinity of 80% or more. A growth rate as high as 40nm/min is obtained and direct growth of the Si polycrystallites on the PET substrate without incubation layers was confirmed.
Keyword (in Japanese) (See Japanese page) 
(in English) Polycrystalline silicon / PECVD / Polyethylene terephthalate / Pulsed / Atmospheric pressure / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 16, ED2009-15, pp. 63-67, April 2009.
Paper # ED2009-15 
Date of Issue 2009-04-16 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-15

Conference Information
Committee ED  
Conference Date 2009-04-23 - 2009-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) TFT, etc 
Paper Information
Registration To ED 
Conference Code 2009-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of polycrystalline Si on plastic substrate using pulsed-plasma CVD under near atmospheric Pressure 
Sub Title (in English)  
Keyword(1) Polycrystalline silicon  
Keyword(2) PECVD  
Keyword(3) Polyethylene terephthalate  
Keyword(4) Pulsed  
Keyword(5) Atmospheric pressure  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shogo Murashige  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Mitsutaka Matsumoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Yohei Inayoshi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Maki Suemitsu  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Setsuo Nakajima  
5th Author's Affiliation Sekisui Chemicals Co. Ltd (Sekisui Chemicals Co. Ltd)
6th Author's Name Tsuyoshi Uehara  
6th Author's Affiliation Sekisui Chemicals Co. Ltd (Sekisui Chemicals Co. Ltd)
7th Author's Name Yasutake Toyoshima  
7th Author's Affiliation AIST-ETRI (AIST-ETRI)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2009-04-24 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-15 
Volume (vol) vol.109 
Number (no) no.16 
Page pp.63-67 
#Pages 5 
Date of Issue 2009-04-16 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan