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Paper Abstract and Keywords
Presentation 2009-05-15 11:20
Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots
Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21
Abstract (in Japanese) (See Japanese page) 
(in English) In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of InGaAsN/GaPN quantum structures as the active layer and investigated the characterization of the InGaAsN/GaPN QDs grown by molecular beam epitaxy (MBE). We successfully grew multiple stacked In0.5Ga0.5AsN/GaPN QDs up to 5QD layers without any structural defect formation by the suppression of the As/P exchange reaction for the multiple stacked InGaAsN/GaPN QDs. Room-temperature photoluminescence emission was observed for the multiple stacked InGaAsN/GaPN QDs. Therefore, the InGaAsN/GaPN QDs are extremely suitable as the active layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Si / OEIC / InGaAsN / GaInNAs / self-assembled quantum dots / dilute nitride / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 23, ED2009-31, pp. 71-76, May 2009.
Paper # ED2009-31 
Date of Issue 2009-05-07 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-31 CPM2009-21 SDM2009-21

Conference Information
Committee ED CPM SDM  
Conference Date 2009-05-14 - 2009-05-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Satellite Office, Toyohashi Univ. of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） 
Paper Information
Registration To ED 
Conference Code 2009-05-ED-CPM-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots 
Sub Title (in English)  
Keyword(1) Si  
Keyword(2) OEIC  
Keyword(3) InGaAsN  
Keyword(4) GaInNAs  
Keyword(5) self-assembled quantum dots  
Keyword(6) dilute nitride  
Keyword(7)  
Keyword(8)  
1st Author's Name Noriyuki Urakami  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
2nd Author's Name Ryosuke Noma  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
3rd Author's Name Kazuyuki Umeno  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
4th Author's Name Saburo Mitsuyoshi  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
5th Author's Name Hiroshi Okada  
5th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
6th Author's Name Yuzo Furukawa  
6th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
7th Author's Name Akihiro Wakahara  
7th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. of Tech.)
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Speaker Author-1 
Date Time 2009-05-15 11:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-31, CPM2009-21, SDM2009-21 
Volume (vol) vol.109 
Number (no) no.23(ED), no.24(CPM), no.25(SDM) 
Page pp.71-76 
#Pages 6 
Date of Issue 2009-05-07 (ED, CPM, SDM) 

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