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Paper Abstract and Keywords
Presentation 2009-06-12 09:30
Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb
Hiroyuki Nishino, Ichita Kawahira, Shinsuke Hara, Hiroki I. Fujishiro (Tokyo Univ. of Sci.) ED2009-44
Abstract (in Japanese) (See Japanese page) 
(in English) Narrow band gap semiconductors such as InAs and InSb have been attracted much attention as possible channel materials to realize next generation devices for terahertz applications and the post-Si CMOS. These channels, however, generally suffer from biaxial strains because of a lattice mismatch between the channel and the buffer. In this paper, we calculate the band structure of the strained InAs and InSb, and investigate the influence of the biaxial strains on the electron transport properties.
Keyword (in Japanese) (See Japanese page) 
(in English) InAs / InSb / Strain / Band structure / Empirical pseudopotential method / Impact ionization / Monte Carlo Method / Electron transport properties  
Reference Info. IEICE Tech. Rep., vol. 109, no. 81, ED2009-44, pp. 41-46, June 2009.
Paper # ED2009-44 
Date of Issue 2009-06-04 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-44

Conference Information
Committee ED  
Conference Date 2009-06-11 - 2009-06-12 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2009-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical Study of Band Structures and Electron Transport properties in Strained InAs and InSb 
Sub Title (in English)  
Keyword(1) InAs  
Keyword(2) InSb  
Keyword(3) Strain  
Keyword(4) Band structure  
Keyword(5) Empirical pseudopotential method  
Keyword(6) Impact ionization  
Keyword(7) Monte Carlo Method  
Keyword(8) Electron transport properties  
1st Author's Name Hiroyuki Nishino  
1st Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
2nd Author's Name Ichita Kawahira  
2nd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
3rd Author's Name Shinsuke Hara  
3rd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
4th Author's Name Hiroki I. Fujishiro  
4th Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
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Speaker Author-1 
Date Time 2009-06-12 09:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2009-44 
Volume (vol) vol.109 
Number (no) no.81 
Page pp.41-46 
#Pages 6 
Date of Issue 2009-06-04 (ED) 

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