Paper Abstract and Keywords |
Presentation |
2009-06-19 16:50
Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 Link to ES Tech. Rep. Archives: SDM2009-42 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by MOCVD using dipivaloymethanato precursors, and the influence of N2 annealing on interfacial reaction for this stack structure was examined. From analyses of x-ray photoelectron spectroscopy and Fourier transform infrared attenuated total reflection, we found that compositional mixing between LaOx and HfO2 becomes significant from 600°C upwards and that interfacial reaction between HfLayOz and SiO2 proceeds consistently at 1000°C in N2 ambience. And, by fitting a Gaussian function to measured La depth profiles, the La diffusion constant in HfO2 at 600 and 800ºC were determined. Reduction in the gap states with La incorporation into HfO2 was confirmed by total photoelectron yield measurements. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High-k Dielectric / HfO2 / LaOx / Interfacial Reaction / X-ray Photoelectron Spectroscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 87, SDM2009-42, pp. 87-92, June 2009. |
Paper # |
SDM2009-42 |
Date of Issue |
2009-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-42 Link to ES Tech. Rep. Archives: SDM2009-42 |
Conference Information |
Committee |
SDM |
Conference Date |
2009-06-19 - 2009-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx |
Sub Title (in English) |
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Keyword(1) |
High-k Dielectric |
Keyword(2) |
HfO2 |
Keyword(3) |
LaOx |
Keyword(4) |
Interfacial Reaction |
Keyword(5) |
X-ray Photoelectron Spectroscopy |
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1st Author's Name |
Akio Ohta |
1st Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
2nd Author's Name |
Daisuke Kanme |
2nd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
3rd Author's Name |
Seiichiro Higashi |
3rd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
4th Author's Name |
Seiichi Miyazaki |
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Hiroshima University (Hiroshima Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-06-19 16:50:00 |
Presentation Time |
5 minutes |
Registration for |
SDM |
Paper # |
SDM2009-42 |
Volume (vol) |
vol.109 |
Number (no) |
no.87 |
Page |
pp.87-92 |
#Pages |
6 |
Date of Issue |
2009-06-12 (SDM) |
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