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Paper Abstract and Keywords
Presentation 2009-06-19 13:00
Fermi Level Pinning at Metal/Germanium Interface and its Controllability
Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (The Univ. of Tokyo//JST-CREST) SDM2009-32
Abstract (in Japanese) (See Japanese page) 
(in English) The purpose is to understand metal/germanium (Ge) junction characteristics to control Schottky barrier height at metal/Ge interface. We investigated the junction characteristics dependence of metal work functions. All metal/p-Ge and metal/n-Ge junctions have shown ohmic and Schottky characteristics, respectively, with the strong Fermi level pinning to valence band edge of Ge. On the other hand, it is well known that unpinned insulator/Ge interface can be observed at metal/insulator/Ge capacitor as surface potential modulation. By inserting ultra-thin oxide at metal/Ge junction, strong Fermi level pinning was modulated and Schottky character to p-Ge and ohmic one to n-Ge were obtained. This enables us to demonstrate metal source/drain Ge-NMOSFET operation.
Keyword (in Japanese) (See Japanese page) 
(in English) germanium / Schottky junction / Fermi level pinning / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 87, SDM2009-32, pp. 33-38, June 2009.
Paper # SDM2009-32 
Date of Issue 2009-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-06-19 - 2009-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fermi Level Pinning at Metal/Germanium Interface and its Controllability 
Sub Title (in English)  
Keyword(1) germanium  
Keyword(2) Schottky junction  
Keyword(3) Fermi level pinning  
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1st Author's Name Tomonori Nishimura  
1st Author's Affiliation The University of Tokyo/Japan Science and Technology Agency, CREST (The Univ. of Tokyo//JST-CREST)
2nd Author's Name Kosuke Nagashio  
2nd Author's Affiliation The University of Tokyo/Japan Science and Technology Agency, CREST (The Univ. of Tokyo//JST-CREST)
3rd Author's Name Koji Kita  
3rd Author's Affiliation The University of Tokyo/Japan Science and Technology Agency, CREST (The Univ. of Tokyo//JST-CREST)
4th Author's Name Akira Toriumi  
4th Author's Affiliation The University of Tokyo/Japan Science and Technology Agency, CREST (The Univ. of Tokyo//JST-CREST)
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Speaker Author-1 
Date Time 2009-06-19 13:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-32 
Volume (vol) vol.109 
Number (no) no.87 
Page pp.33-38 
#Pages 6 
Date of Issue 2009-06-12 (SDM) 

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