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| Presentation | 2009-06-19 13:40 Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical Hideto Imajo, Hyun Lee, Dong-Hun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)  SDM2009-34 Link to ES Tech. Rep. Archives: SDM2009-34 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The electrical properties and interface states have been improved by fluorine treatment on Ge, but there was a problem which is the degradation of the fluorine treatment effect by the annealing. Therefore, the nitrogen radical treatment is added to enhance the effect of fluorine treatment. HfO2 film as the high-k dielectrics was deposited by photo-assisted MOCVD. Fluorine treatment was taken by exposing surface of germanium to fluorine (5%) gas before deposition of HfO2 film. Nitrogen radical treatment was taken by RF plasma. From the results of C-V and J-V measurements, it could be concluded that fluorine and nitrogen radical treatment improves the electrical properties of HfO2/Ge MIS structure compared to fluorine treatment only. Moreover, the interface states have been evaluated by deep level transient spectroscopy (DLTS) method, which gives the interface trap density in the band-gap. The interface trap density in the band-gap of HfO2/Ge MIS structure was decreased by fluorine and nitrogen radical treatment compared to fluorine treatment only. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | fluorine treatment / nitrogen radical treatment / deep level transient spectroscopy(DLTS) / HfO2/Ge MIS / photo-assisted MOCVD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 87, SDM2009-34, pp. 45-50, June 2009. | |
| Paper # | SDM2009-34 | |
| Date of Issue | 2009-06-12 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-34 Link to ES Tech. Rep. Archives: SDM2009-34 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-06-19 - 2009-06-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement of electrical characteristics of HfO2/Ge MIS structure treated by fluorine gas and nitrogen radical |
| Sub Title (in English) | |
| Keyword(1) | fluorine treatment |
| Keyword(2) | nitrogen radical treatment |
| Keyword(3) | deep level transient spectroscopy(DLTS) |
| Keyword(4) | HfO2/Ge MIS |
| Keyword(5) | photo-assisted MOCVD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hideto Imajo |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Hyun Lee |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Dong-Hun Lee |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Yuichi Yoshioka |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Takeshi Kanashima |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Masanori Okuyama |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2009-06-19 13:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2009-34 |
| Volume (vol) | vol.109 |
| Number (no) | no.87 |
| Page | pp.45-50 |
| #Pages | 6 |
| Date of Issue | 2009-06-12 (SDM) |
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