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Paper Abstract and Keywords
Presentation 2009-06-19 15:40
Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition
Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39
Abstract (in Japanese) (See Japanese page) 
(in English) Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), both of which are induced by interface dipole modulation at high-k/SiO2 interface, is investigated. Three types of dipole modulation are examined; Al addition, La addition, and changing quality of interfacial SiO2 layer. Extrinsic scattering components due to increases of interface state and surface roughness are extracted and separated. It is found that RCS due to interface dipole modulation by Al addition increases with increasing ΔVt, while that by La addition is constant, independent of ΔVt. Inevitability of additional scattering for ΔVt is discussed based on two different models for dipole formation mechanisms.
Keyword MISFET, high-k, interface dipole, mobility, threshold voltage, HfSiON, La addition, Al addition
Keyword (in Japanese) (See Japanese page) 
(in English) MISFET / high-k / interface dipole / mobility / threshold voltage / HfSiON / La / Al  
Reference Info. IEICE Tech. Rep., vol. 109, no. 87, SDM2009-39, pp. 71-76, June 2009.
Paper # SDM2009-39 
Date of Issue 2009-06-12 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-06-19 - 2009-06-19 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition 
Sub Title (in English)  
Keyword(1) MISFET  
Keyword(2) high-k  
Keyword(3) interface dipole  
Keyword(4) mobility  
Keyword(5) threshold voltage  
Keyword(6) HfSiON  
Keyword(7) La  
Keyword(8) Al  
1st Author's Name Kosuke Tatsumura  
1st Author's Affiliation Toshiba Corporation (Toshiba Corp.)
2nd Author's Name Takamitsu Ishihara  
2nd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
3rd Author's Name Seiji Inumiya  
3rd Author's Affiliation Toshiba Corporation (Toshiba Corp.)
4th Author's Name Kazuaki Nakajima  
4th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
5th Author's Name Akio Kaneko  
5th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
6th Author's Name Masakazu Goto  
6th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
7th Author's Name Shigeru Kawanaka  
7th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
8th Author's Name Atsuhiro Kinoshita  
8th Author's Affiliation Toshiba Corporation (Toshiba Corp.)
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Speaker Author-1 
Date Time 2009-06-19 15:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-39 
Volume (vol) vol.109 
Number (no) no.87 
Page pp.71-76 
#Pages 6 
Date of Issue 2009-06-12 (SDM) 

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