Paper Abstract and Keywords |
Presentation |
2009-06-19 16:20
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41 Link to ES Tech. Rep. Archives: SDM2009-41 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr oxides with thickness variation less than 2% was achieved. Polycrystalline and epitaxially-grown Pr2O3 films with cubic structures were formed on Si(100) and Si(111) substrates, respectively. A dielectric constant of these films is obtained to be 12.3 to 16.8. Comparing crystalline structures of Pr oxides formed by CVD, ALD, and MBE, it is expected that the crystalline structure of the ALD-Pr oxide can be controlled by optimization of the H2O partial pressure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Atomic layer deposition / Pr(EtCp)3 / High-k / Pr2O3 / PrO2 / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 87, SDM2009-41, pp. 81-85, June 2009. |
Paper # |
SDM2009-41 |
Date of Issue |
2009-06-12 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2009-41 Link to ES Tech. Rep. Archives: SDM2009-41 |
Conference Information |
Committee |
SDM |
Conference Date |
2009-06-19 - 2009-06-19 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technology for Dielectric Thin Films for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2009-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. |
Sub Title (in English) |
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Keyword(1) |
Atomic layer deposition |
Keyword(2) |
Pr(EtCp)3 |
Keyword(3) |
High-k |
Keyword(4) |
Pr2O3 |
Keyword(5) |
PrO2 |
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1st Author's Name |
Hiroki Kondo |
1st Author's Affiliation |
Nagoya University (Nagoya Univ.) |
2nd Author's Name |
Kazuya Furuta |
2nd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
3rd Author's Name |
Hirotaka Matsui |
3rd Author's Affiliation |
Nagoya University (Nagoya Univ.) |
4th Author's Name |
Mitsuo Sakashita |
4th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
5th Author's Name |
Shigeaki Zaima |
5th Author's Affiliation |
Nagoya University (Nagoya Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-06-19 16:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2009-41 |
Volume (vol) |
vol.109 |
Number (no) |
no.87 |
Page |
pp.81-85 |
#Pages |
5 |
Date of Issue |
2009-06-12 (SDM) |
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