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| Presentation | 2009-06-19 11:20 Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo)  SDM2009-30 Link to ES Tech. Rep. Archives: SDM2009-30 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS interfaces with various interface layers by the conductance method based on the conventional model including the only majority carrier response and a newly-proposed model including the both carrier responses with interface traps. The analysis by using the conventional model leads to the inappropriate results of the Ge MIS interface properties near room temperature. On the other hand, the proposed model can accurately characterize ones. As a result, the electron capture cross sections hardly depend on the energy in all samples as similar with those of Si MOS interface traps. This result indicates that the similar defects to a Si MIS interface are formed at the Ge MIS interfaces. Furthermore, the magnitudes of the electron capture cross sections for each sample depend on the oxygen or nitrogen contents of the interface layers, suggesting that the different defect structures exist. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Germanium / Interface trap / minority carrier / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 87, SDM2009-30, pp. 21-26, June 2009. | |
| Paper # | SDM2009-30 | |
| Date of Issue | 2009-06-12 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-30 Link to ES Tech. Rep. Archives: SDM2009-30 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-06-19 - 2009-06-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Properties of Ge MIS Interface Defects |
| Sub Title (in English) | |
| Keyword(1) | Germanium |
| Keyword(2) | Interface trap |
| Keyword(3) | minority carrier |
| Keyword(4) | |
| Keyword(5) | |
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| 1st Author's Name | Noriyuki Taoka |
| 1st Author's Affiliation | MIRAI-NIRC (MIRAI-NIRC) |
| 2nd Author's Name | Wataru Mizubayashi |
| 2nd Author's Affiliation | MIRAI-NIRC (MIRAI-NIRC) |
| 3rd Author's Name | Yukinori Morita |
| 3rd Author's Affiliation | MIRAI-NIRC (MIRAI-NIRC) |
| 4th Author's Name | Shinji Migita |
| 4th Author's Affiliation | MIRAI-NIRC (MIRAI-NIRC) |
| 5th Author's Name | Hiroyuki Ota |
| 5th Author's Affiliation | MIRAI-NIRC (MIRAI-NIRC) |
| 6th Author's Name | Shinichi Takagi |
| 6th Author's Affiliation | MIRAI-NIRC/The University of Tokyo (MIRAI-NIRC/Univ. of Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2009-06-19 11:20:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2009-30 |
| Volume (vol) | vol.109 |
| Number (no) | no.87 |
| Page | pp.21-26 |
| #Pages | 6 |
| Date of Issue | 2009-06-12 (SDM) |
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