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Paper Abstract and Keywords
Presentation 2009-06-24 14:30
[Invited Talk] Theoretical study on graphene field-effect transistors
Eiichi Sano (Hokkaido Univ./JST), Taiichi Otsuji (Tohoku Univ../JST) ED2009-62 SDM2009-57
Abstract (in Japanese) (See Japanese page) 
(in English) Graphene is one of the most attractive materials for“beyond CMOS” electronics. We investigate graphene-layer compositions suitable for the channel in graphene field-effect transistors (GFETs) in terms of the energy band structure and charge controllability. We examine three major methods of opening a bandgap in graphene. We then compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects for GFETs, where graphene is modeled as a narrow-gap semiconductor based on the band consideration, with those for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) Graphene / Energy band structure / Effective mass / MOSFET / SOI / Delay / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-62, pp. 53-58, June 2009.
Paper # ED2009-62 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-62 SDM2009-57

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Theoretical study on graphene field-effect transistors 
Sub Title (in English)  
Keyword(1) Graphene  
Keyword(2) Energy band structure  
Keyword(3) Effective mass  
Keyword(4) MOSFET  
Keyword(5) SOI  
Keyword(6) Delay  
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Keyword(8)  
1st Author's Name Eiichi Sano  
1st Author's Affiliation Hokkaido University/Japan Science and Technology Agency (Hokkaido Univ./JST)
2nd Author's Name Taiichi Otsuji  
2nd Author's Affiliation Tohoku University/Japan Science and Technology Agency (Tohoku Univ../JST)
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Speaker Author-1 
Date Time 2009-06-24 14:30:00 
Presentation Time 30 minutes 
Registration for ED 
Paper # ED2009-62, SDM2009-57 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.53-58 
#Pages 6 
Date of Issue 2009-06-17 (ED, SDM) 

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