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| Presentation | 2009-06-25 12:15 Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector Yasuyuki Miyamoto, Shinnosuke Takahashi, Takashi Kobayashi, Hiroyuki Suzuki, Kazuhito Furuya (Tokyo Inst. of Tech.)  ED2009-79 SDM2009-74 Link to ES Tech. Rep. Archives: ED2009-79 SDM2009-74 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths―200, 400, and 600 nm―and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs/InP / HBT / Kirk effect / current spreading / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 97, ED2009-79, pp. 129-132, June 2009. | |
| Paper # | ED2009-79 | |
| Date of Issue | 2009-06-17 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-79 SDM2009-74 Link to ES Tech. Rep. Archives: ED2009-79 SDM2009-74 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2009-06-24 - 2009-06-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Haeundae Grand Hotel, Busan, Korea |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-06-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Estimation of collector current spreading in InGaAs SHBT having 75-nm-thick collector |
| Sub Title (in English) | |
| Keyword(1) | InGaAs/InP |
| Keyword(2) | HBT |
| Keyword(3) | Kirk effect |
| Keyword(4) | current spreading |
| Keyword(5) | |
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| 1st Author's Name | Yasuyuki Miyamoto |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Shinnosuke Takahashi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Takashi Kobayashi |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name | Hiroyuki Suzuki |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 5th Author's Name | Kazuhito Furuya |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-06-25 12:15:00 |
| Presentation Time | 15 minutes |
| Registration for | ED |
| Paper # | ED2009-79, SDM2009-74 |
| Volume (vol) | vol.109 |
| Number (no) | no.97(ED), no.98(SDM) |
| Page | pp.129-132 |
| #Pages | 4 |
| Date of Issue | 2009-06-17 (ED, SDM) |
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