講演抄録/キーワード |
講演名 |
2009-06-25 12:15
Electrical Detection of Silicon Binding Protein-Protein A Using a p-MOSFET Sensor ○Hideki Murakami・Syed Mahboob・Kiyotaka Katayama・Katsunori Makihara・Mitsuhisa Ikeda・Yumehiro Hata・Akio Kuroda・Seiichiro Higashi・Seiichi Miyazaki(Hiroshima Univ.) ED2009-87 SDM2009-82 エレソ技報アーカイブへのリンク:ED2009-87 SDM2009-82 |
抄録 |
(和) |
We have focused on silica binding protein(SBP)-tagged protein A as a key element for bio-sensing since this combined protein can act as an anchor for variety of target bio-molecules¬ on Si and SiO2 surfaces In this work, we confirmed the change in the surface potential with an attachment of SBP-tagged protein A on Si and SiO2, and clearly observed an increase in conductivity of undoped poly-Si thin film on thermally -grown SiO2 just after the attachment of silica binding protein-protein A on the surface. These results can be attributable to the change in the surface band bending of the poly-Si film. In p-channel FETs with a SiO2/Si3N4 gate dielectric, the drain current was significantly decreased by the attachment of the SBP-tagged protein A. Observed decrease in the drain current can be interpreted in terms of screening of pre-existing negative charges at the interface between SiO2and Si3N4 and in the Si3N4 film with the attachment of electrically-polarized SBP-protein A. |
(英) |
We have focused on silica binding protein(SBP)-tagged protein A as a key element for bio-sensing since this combined protein can act as an anchor for variety of target bio-molecules¬ on Si and SiO2 surfaces In this work, we confirmed the change in the surface potential with an attachment of SBP-tagged protein A on Si and SiO2, and clearly observed an increase in conductivity of undoped poly-Si thin film on thermally -grown SiO2 just after the attachment of silica binding protein-protein A on the surface. These results can be attributable to the change in the surface band bending of the poly-Si film. In p-channel FETs with a SiO2/Si3N4 gate dielectric, the drain current was significantly decreased by the attachment of the SBP-tagged protein A. Observed decrease in the drain current can be interpreted in terms of screening of pre-existing negative charges at the interface between SiO2and Si3N4 and in the Si3N4 film with the attachment of electrically-polarized SBP-protein A. |
キーワード |
(和) |
Biosensor / Silica binding protein / / / / / / |
(英) |
Biosensor / Silica binding protein / / / / / / |
文献情報 |
信学技報, vol. 109, no. 98, SDM2009-82, pp. 161-164, 2009年6月. |
資料番号 |
SDM2009-82 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-87 SDM2009-82 エレソ技報アーカイブへのリンク:ED2009-87 SDM2009-82 |