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Paper Abstract and Keywords
Presentation 2009-06-25 08:30
[Invited Talk] Electron Devices Based on GaN and Related Nitride Semiconductors
Masaaki Kuzuhara (Univ. of Fukui) ED2009-70 SDM2009-65
Abstract (in Japanese) (See Japanese page) 
(in English) State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been described. The importance of field plate design for achieving optimum high breakdown voltages is discussed based on a two-dimensional numerical device simulation, taking material parameters of the insulating film into account. Simulation results also indicated that an InN or In-rich InGaN channel FET is extremely promising for THz frequency operation. Novel III-nitride heterostructures, such as AlInN/InN/AlInN and AlInN/InGaN/AlInN fabricated on non-polar substrates, will provide additional freedom in designing a new device structure that ensures both high current drive capability and high-frequency performance. We predict that millimeter-wave high-power transistors operated at over 60GHz will become more important to establish safe and sustainable society in the future.
Keyword (in Japanese) (See Japanese page) 
(in English) nitride semiconductors / GaN / InGaN / AlGaN / AlInN / InN / transistors / HEMT  
Reference Info. IEICE Tech. Rep., vol. 109, no. 97, ED2009-70, pp. 87-92, June 2009.
Paper # ED2009-70 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-70 SDM2009-65

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2009-06-SDM-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electron Devices Based on GaN and Related Nitride Semiconductors 
Sub Title (in English)  
Keyword(1) nitride semiconductors  
Keyword(2) GaN  
Keyword(3) InGaN  
Keyword(4) AlGaN  
Keyword(5) AlInN  
Keyword(6) InN  
Keyword(7) transistors  
Keyword(8) HEMT  
1st Author's Name Masaaki Kuzuhara  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2009-06-25 08:30:00 
Presentation Time 30 minutes 
Registration for ED 
Paper # ED2009-70, SDM2009-65 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.87-92 
#Pages 6 
Date of Issue 2009-06-17 (ED, SDM) 

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