Paper Abstract and Keywords |
Presentation |
2009-06-25 08:30
[Invited Talk]
Electron Devices Based on GaN and Related Nitride Semiconductors Masaaki Kuzuhara (Univ. of Fukui) ED2009-70 SDM2009-65 Link to ES Tech. Rep. Archives: ED2009-70 SDM2009-65 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been described. The importance of field plate design for achieving optimum high breakdown voltages is discussed based on a two-dimensional numerical device simulation, taking material parameters of the insulating film into account. Simulation results also indicated that an InN or In-rich InGaN channel FET is extremely promising for THz frequency operation. Novel III-nitride heterostructures, such as AlInN/InN/AlInN and AlInN/InGaN/AlInN fabricated on non-polar substrates, will provide additional freedom in designing a new device structure that ensures both high current drive capability and high-frequency performance. We predict that millimeter-wave high-power transistors operated at over 60GHz will become more important to establish safe and sustainable society in the future. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
nitride semiconductors / GaN / InGaN / AlGaN / AlInN / InN / transistors / HEMT |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 97, ED2009-70, pp. 87-92, June 2009. |
Paper # |
ED2009-70 |
Date of Issue |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-70 SDM2009-65 Link to ES Tech. Rep. Archives: ED2009-70 SDM2009-65 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2009-06-24 - 2009-06-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Haeundae Grand Hotel, Busan, Korea |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2009-06-SDM-ED |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Electron Devices Based on GaN and Related Nitride Semiconductors |
Sub Title (in English) |
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Keyword(1) |
nitride semiconductors |
Keyword(2) |
GaN |
Keyword(3) |
InGaN |
Keyword(4) |
AlGaN |
Keyword(5) |
AlInN |
Keyword(6) |
InN |
Keyword(7) |
transistors |
Keyword(8) |
HEMT |
1st Author's Name |
Masaaki Kuzuhara |
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University of Fukui (Univ. of Fukui) |
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Speaker |
Author-1 |
Date Time |
2009-06-25 08:30:00 |
Presentation Time |
30 minutes |
Registration for |
ED |
Paper # |
ED2009-70, SDM2009-65 |
Volume (vol) |
vol.109 |
Number (no) |
no.97(ED), no.98(SDM) |
Page |
pp.87-92 |
#Pages |
6 |
Date of Issue |
2009-06-17 (ED, SDM) |
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