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Paper Abstract and Keywords
Presentation 2009-06-25 09:00
[Invited Talk] Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device features many input gates, and many outputs can be attached. A nanodot array device with three input gates and two output terminals was fabricated on a silicon-on-insulator wafer using conventional Si MOS processes. Its feasibility was demonstrated by its operation as both a half adder and a full adder when the operation voltage was carefully selected.
Keyword (in Japanese) (See Japanese page) 
(in English) nanodot / single-electron / Coulomb blockade / SOI / adder / half adder / full adder / selectable logic device  
Reference Info. IEICE Tech. Rep., vol. 109, no. 98, SDM2009-78, pp. 145-148, June 2009.
Paper # SDM2009-78 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-83 SDM2009-78

Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Novel-Functional Single-Electron Devices Using Silicon Nanodot Array 
Sub Title (in English)  
Keyword(1) nanodot  
Keyword(2) single-electron  
Keyword(3) Coulomb blockade  
Keyword(4) SOI  
Keyword(5) adder  
Keyword(6) half adder  
Keyword(7) full adder  
Keyword(8) selectable logic device  
1st Author's Name Yasuo Takahashi  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Takuya Kaizawa  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Mingyu Jo  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Masashi Arita  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Akira Fujiwar  
5th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation (NTT)
6th Author's Name Yukinori Ono  
6th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation (NTT)
7th Author's Name Hiroshi Inokawa  
7th Author's Affiliation Research Institute of Electronics, Shizuoka University (Shizuoka Univ.)
8th Author's Name Jung-Bum Choi  
8th Author's Affiliation Chungbuk National University (Chungbuk National Univ.)
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Speaker Author-1 
Date Time 2009-06-25 09:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # ED2009-83, SDM2009-78 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.145-148 
#Pages 4 
Date of Issue 2009-06-17 (ED, SDM) 

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