講演抄録/キーワード |
講演名 |
2009-06-26 09:00
[招待講演]Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor ○Taizoh Sadoh・Takanori Tanaka・Yasuharu Ohta・Kaoru Toko・Masanobu Miyao(Kyushu Univ.) ED2009-91 SDM2009-86 エレソ技報アーカイブへのリンク:ED2009-91 SDM2009-86 |
抄録 |
(和) |
Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI(100) structures with 400 micron length were obtained using Si(100) seeds. The very long growth was explained on the basis of the solidification temperature gradient due to Si-Ge mixing around the seeding area and the thermal gradient due to the latent heat around the solid/liquid interface at the growth front. On the other hand, giant GOI structures with rotating crystal orientations were obtained using Si(111) seeds. The rotation angle depended on the growth direction in plane to the surface. Namely, the rotation angle changed with a 60o period and became 0o and about 35o for <011> and <121> directions, respectively. The rotating growth was explained on the basis of the bonding strength between lattice planes at the growth front. |
(英) |
Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI(100) structures with 400 micron length were obtained using Si(100) seeds. The very long growth was explained on the basis of the solidification temperature gradient due to Si-Ge mixing around the seeding area and the thermal gradient due to the latent heat around the solid/liquid interface at the growth front. On the other hand, giant GOI structures with rotating crystal orientations were obtained using Si(111) seeds. The rotation angle depended on the growth direction in plane to the surface. Namely, the rotation angle changed with a 60o period and became 0o and about 35o for <011> and <121> directions, respectively. The rotating growth was explained on the basis of the bonding strength between lattice planes at the growth front. |
キーワード |
(和) |
GOI / 液相エピタキシー / 集積回路 / MOSFET / / / / |
(英) |
GOI / liquid-phase epitaxy / LSI / MOSFET / / / / |
文献情報 |
信学技報, vol. 109, no. 98, SDM2009-86, pp. 177-180, 2009年6月. |
資料番号 |
SDM2009-86 |
発行日 |
2009-06-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2009-91 SDM2009-86 エレソ技報アーカイブへのリンク:ED2009-91 SDM2009-86 |