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Paper Abstract and Keywords
Presentation 2009-06-26 09:00
[Invited Talk] Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor
Taizoh Sadoh, Takanori Tanaka, Yasuharu Ohta, Kaoru Toko, Masanobu Miyao (Kyushu Univ.) ED2009-91 SDM2009-86
Abstract (in Japanese) (See Japanese page) 
(in English) Lateral liquid-phase epitaxy of Ge-on-insulator (GOI) using Si seeds has been investigated. Giant single-crystalline GOI(100) structures with 400 micron length were obtained using Si(100) seeds. The very long growth was explained on the basis of the solidification temperature gradient due to Si-Ge mixing around the seeding area and the thermal gradient due to the latent heat around the solid/liquid interface at the growth front. On the other hand, giant GOI structures with rotating crystal orientations were obtained using Si(111) seeds. The rotation angle depended on the growth direction in plane to the surface. Namely, the rotation angle changed with a 60o period and became 0o and about 35o for <011> and <121> directions, respectively. The rotating growth was explained on the basis of the bonding strength between lattice planes at the growth front.
Keyword (in Japanese) (See Japanese page) 
(in English) GOI / liquid-phase epitaxy / LSI / MOSFET / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 98, SDM2009-86, pp. 177-180, June 2009.
Paper # SDM2009-86 
Date of Issue 2009-06-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM ED  
Conference Date 2009-06-24 - 2009-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Haeundae Grand Hotel, Busan, Korea 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2009-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lateral liquid-phase epitaxy of Ge on insulator using Si seed for ultrahigh speed transistor 
Sub Title (in English)  
Keyword(1) GOI  
Keyword(2) liquid-phase epitaxy  
Keyword(3) LSI  
Keyword(4) MOSFET  
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Keyword(6)  
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1st Author's Name Taizoh Sadoh  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Takanori Tanaka  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Yasuharu Ohta  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Kaoru Toko  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name Masanobu Miyao  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2009-06-26 09:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # ED2009-91, SDM2009-86 
Volume (vol) vol.109 
Number (no) no.97(ED), no.98(SDM) 
Page pp.177-180 
#Pages 4 
Date of Issue 2009-06-17 (ED, SDM) 

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