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Paper Abstract and Keywords
Presentation 2009-07-16 15:00
Mobility in Silicon Nanowire GAA Transistor on (110) SOI
Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo.) SDM2009-105 ICD2009-21
Abstract (in Japanese) (See Japanese page) 
(in English) Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is described, utilizing advanced split C-V method. [110]-NWs show high mobility, 2.4x enhancement over universal (100) mobility, even in high Ninv region and in narrow (25nm) NWs. Furthermore, effects of uniaxial tensile stress are also investigated, indicating that [110] direction uniaxial stress is effective to modulate hole mobility in NWs.
Keyword (in Japanese) (See Japanese page) 
(in English) mobility / silicon nanowire / SOI / GAA FET / unaxial strain / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 133, SDM2009-105, pp. 45-48, July 2009.
Paper # SDM2009-105 
Date of Issue 2009-07-09 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-105 ICD2009-21

Conference Information
Committee ICD SDM  
Conference Date 2009-07-16 - 2009-07-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2009-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Mobility in Silicon Nanowire GAA Transistor on (110) SOI 
Sub Title (in English)  
Keyword(1) mobility  
Keyword(2) silicon nanowire  
Keyword(3) SOI  
Keyword(4) GAA FET  
Keyword(5) unaxial strain  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Jiezhi Chen  
1st Author's Affiliation Institute of Industrial Science, University of Tokyo (Univ. of Tokyo.)
2nd Author's Name Takuya Saraya  
2nd Author's Affiliation Institute of Industrial Science, University of Tokyo (Univ. of Tokyo.)
3rd Author's Name Toshiro Hiramoto  
3rd Author's Affiliation Institute of Industrial Science, University of Tokyo (Univ. of Tokyo.)
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Speaker Author-1 
Date Time 2009-07-16 15:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2009-105, ICD2009-21 
Volume (vol) vol.109 
Number (no) no.133(SDM), no.134(ICD) 
Page pp.45-48 
#Pages 4 
Date of Issue 2009-07-09 (SDM, ICD) 

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