| Paper Abstract and Keywords |
| Presentation |
2009-07-30 13:25
High efficiency dual-resonant-cavity InGaAs pin-PD for radio-over-fiber application Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Shigetaka Itakura, Kiyohide Sakai, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) MW2009-35 OPE2009-35 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
For radio-over-fiber applications, we have developed a high-efficient InGaAs pin PD with a dual resonant cavity, which reduces the responsivity dependence on wavelength. The PD shows a high responsivity of 0.90 A/W at 1.54um in spite of a thinner absorbing layer of 0.8um to flow high current. The responsivity dependence on wavelength is low and exhibits a high responsivity of over 0.8A/W at wide wavelength range from 1500 to 1565nm. The PD shows a high RF power of +21.5dBm at 5GHz under low light power of +20dBm. The PD is high efficient and a promising device for microwave application. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
radio-over-fiber / resonant cavity / microwave / PD / InGaAs / pin PD / / |
| Reference Info. |
IEICE Tech. Rep., vol. 109, no. 159, OPE2009-35, pp. 31-34, July 2009. |
| Paper # |
OPE2009-35 |
| Date of Issue |
2009-07-23 (MW, OPE) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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| Download PDF |
MW2009-35 OPE2009-35 |