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| Presentation | 2009-08-20 09:05 Property Improvement of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well Motoki Ushigome, Taro Arakawa (Yokohama National Univ.), Kunio Tada (Kanazawa Inst. of Tech.)  EMD2009-26 CPM2009-50 OPE2009-74 LQE2009-33 Link to ES Tech. Rep. Archives: EMD2009-26 CPM2009-50 OPE2009-74 LQE2009-33 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Five-layer Asymmetric Coupled Quantum Well (FACQW) is a potential tailored quantum well suited for high-performance optical modulators and switches. InGaAs/InAlAs FACQW Mach-Zehnder optical modulators were fabricated by molecular beam epitaxy and low-voltage DC operation (V$\pi$・L=1.2 Vmm) at 1.55 $\micro$m was obtained. The large refractive change is mainly due to the unique quantum confined Stark effect (QCSE) of the FACQW. In addition, we redesigned the FACQW structure to reduce the operation voltage. As a result, a new FACQW structure with lower absorption loss and lower operation voltage was found. The electrorefractive effect of the new FACQW structure was theoretically discussed. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Quantum Well / InGaAs / Five-layer Asymmetric Coupled Quantum Well / Optical Modulator / Optical Switch / Electrorefractive Effect / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 175, OPE2009-74, pp. 1-6, Aug. 2009. | |
| Paper # | OPE2009-74 | |
| Date of Issue | 2009-08-13 (EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EMD2009-26 CPM2009-50 OPE2009-74 LQE2009-33 Link to ES Tech. Rep. Archives: EMD2009-26 CPM2009-50 OPE2009-74 LQE2009-33 |
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| Conference Information | |
| Committee | OPE EMD CPM LQE |
| Conference Date | 2009-08-20 - 2009-08-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | OPE |
| Conference Code | 2009-08-OPE-EMD-CPM-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Property Improvement of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well |
| Sub Title (in English) | |
| Keyword(1) | Quantum Well |
| Keyword(2) | InGaAs |
| Keyword(3) | Five-layer Asymmetric Coupled Quantum Well |
| Keyword(4) | Optical Modulator |
| Keyword(5) | Optical Switch |
| Keyword(6) | Electrorefractive Effect |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Motoki Ushigome |
| 1st Author's Affiliation | Yokohama National University (Yokohama National Univ.) |
| 2nd Author's Name | Taro Arakawa |
| 2nd Author's Affiliation | Yokohama National University (Yokohama National Univ.) |
| 3rd Author's Name | Kunio Tada |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-08-20 09:05:00 |
| Presentation Time | 25 minutes |
| Registration for | OPE |
| Paper # | EMD2009-26, CPM2009-50, OPE2009-74, LQE2009-33 |
| Volume (vol) | vol.109 |
| Number (no) | no.173(EMD), no.174(CPM), no.175(OPE), no.176(LQE) |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2009-08-13 (EMD, CPM, OPE, LQE) |
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