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Paper Abstract and Keywords
Presentation 2009-09-25 15:15
C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE
Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band power amplifier with over 340-W output power using 0.8-μm GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 101-W output power and 53-% PAE at 9.8 GHz. This is the highest PAE ever reported X-band power amplifiers with over 50-W output power. We also obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is also the highest output power ever reported C-band power amplifiers.
Keyword (in Japanese) (See Japanese page) 
(in English) C-band / X-band / GaN / high output power / high efficiency / amplifier / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 210, MW2009-86, pp. 73-78, Sept. 2009.
Paper # MW2009-86 
Date of Issue 2009-09-18 (MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW  
Conference Date 2009-09-25 - 2009-09-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Electro-Communications 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2009-09-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE 
Sub Title (in English)  
Keyword(1) C-band  
Keyword(2) X-band  
Keyword(3) GaN  
Keyword(4) high output power  
Keyword(5) high efficiency  
Keyword(6) amplifier  
Keyword(7)  
Keyword(8)  
1st Author's Name Hisao Shigematsu  
1st Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
2nd Author's Name Yusuke Inoue  
2nd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
3rd Author's Name Akihiko Akasegawa  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
4th Author's Name Satoshi Masuda  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
5th Author's Name Masao Yamada  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
6th Author's Name Masahito Kanamura  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
7th Author's Name Toshihiro Ohki  
7th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
8th Author's Name Kozo Makiyama  
8th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
9th Author's Name Naoya Okamoto  
9th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
10th Author's Name Kenji Imanishi  
10th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
11th Author's Name Toshihide Kikkawa  
11th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
12th Author's Name Kazukiyo Joshin  
12th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
13th Author's Name Naoki Hara  
13th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
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Speaker Author-1 
Date Time 2009-09-25 15:15:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # MW2009-86 
Volume (vol) vol.109 
Number (no) no.210 
Page pp.73-78 
#Pages
Date of Issue 2009-09-18 (MW) 


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