| Paper Abstract and Keywords |
| Presentation |
2009-09-25 15:15
C-band 340-W and X-band 100-W GaN Power Amplifiers with Over 50-% PAE Hisao Shigematsu, Yusuke Inoue, Akihiko Akasegawa, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab.) MW2009-86 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
In this paper, we report an X-band power amplifier with over 100-W output power using 0.25-μm GaN-HEMTs and a C-band power amplifier with over 340-W output power using 0.8-μm GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 101-W output power and 53-% PAE at 9.8 GHz. This is the highest PAE ever reported X-band power amplifiers with over 50-W output power. We also obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is also the highest output power ever reported C-band power amplifiers. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
C-band / X-band / GaN / high output power / high efficiency / amplifier / / |
| Reference Info. |
IEICE Tech. Rep., vol. 109, no. 210, MW2009-86, pp. 73-78, Sept. 2009. |
| Paper # |
MW2009-86 |
| Date of Issue |
2009-09-18 (MW) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MW2009-86 |