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Paper Abstract and Keywords
Presentation 2009-09-30 09:25
Measurement of in-plane electric properties in a piezoelectric semiconductor by Brillouin scattering method
Takahiko Yanagitani (Nagoya Inst. of Tech.), Hiroyuki Sano, Mami Matsukawa (Doshisha Univ.) US2009-48
Abstract (in Japanese) (See Japanese page) 
(in English) Non-contact electric property measurements are required in semiconductor samples to avoid mechanical and chemical damages at sample surface. We propose the measurement in the in-plane direction of the sample, using electromechanical coupling. Wide band-gap semiconductors such as GaN, AlN, ZnO, etc. have piezoelectric effect. Therefore, electric properties of these materials can be measured via an electromechanical coupling. To estimate the properties in the crystal with less than 1 •m (which is general value in intrinsic wide band-gap semiconductors), acoustic measurement above the GHz range is essential. We have theoretically and experimentally investigated in-plane directional GHz bulk acoustic wave velocities and attenuations in a ZnO crystal using Brillouin scattering method. Distribution of electric properties in the crystal, separately measured by the electrode, has been clearly detected by the acoustic velocity distribution measurement.
Keyword (in Japanese) (See Japanese page) 
(in English) Acousto-electric effect / Brillouin scattering / Piezoelectric semiconductors / ZnO / In-plane electric properties / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 213, US2009-48, pp. 59-64, Sept. 2009.
Paper # US2009-48 
Date of Issue 2009-09-22 (US) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF US2009-48

Conference Information
Committee US  
Conference Date 2009-09-29 - 2009-09-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Noboribetsu Grand Hotel 
Topics (in Japanese) (See Japanese page) 
Topics (in English) General 
Paper Information
Registration To US 
Conference Code 2009-09-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Measurement of in-plane electric properties in a piezoelectric semiconductor by Brillouin scattering method 
Sub Title (in English)  
Keyword(1) Acousto-electric effect  
Keyword(2) Brillouin scattering  
Keyword(3) Piezoelectric semiconductors  
Keyword(4) ZnO  
Keyword(5) In-plane electric properties  
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Keyword(7)  
Keyword(8)  
1st Author's Name Takahiko Yanagitani  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Hiroyuki Sano  
2nd Author's Affiliation Doshisha University (Doshisha Univ.)
3rd Author's Name Mami Matsukawa  
3rd Author's Affiliation Doshisha University (Doshisha Univ.)
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Speaker Author-1 
Date Time 2009-09-30 09:25:00 
Presentation Time 25 minutes 
Registration for US 
Paper # US2009-48 
Volume (vol) vol.109 
Number (no) no.213 
Page pp.59-64 
#Pages 6 
Date of Issue 2009-09-22 (US) 

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