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| Presentation | 2009-10-15 13:30 FEA fabrication technique based on a ion-induced bending (IIB) phenomenon Tomoya Yoshida, Masayoshi Nagao, Takashi Shimizu, Seigo Kanemaru (AIST)  ED2009-116 Link to ES Tech. Rep. Archives: ED2009-116 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | A simple field-emitter-array (FEA) fabrication process based on ion-induced bending (IIB) phenomenon was developed. The IIB technique is a very simple two-step process, involving the formation of cantilever and subsequent ion-irradiation. It can be applied to a wide range of materials deposited by non-specialized sputtering method. And it was found that the bending angle could be controlled by the ion energy and ion dose, irrespective of the film material and the ion species. The procedural advantages of IIB are that it uses small quantities of material and non-specialized equipment. IIB would therefore be compatible with standard CMOS and/or TFT fabrication processes and could produce large-sized FEDs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ion beam irradiation / thin film / stress relaxation / field emitter array / field emission display / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 230, ED2009-116, pp. 1-6, Oct. 2009. | |
| Paper # | ED2009-116 | |
| Date of Issue | 2009-10-08 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-116 Link to ES Tech. Rep. Archives: ED2009-116 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2009-10-15 - 2009-10-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-10-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | FEA fabrication technique based on a ion-induced bending (IIB) phenomenon |
| Sub Title (in English) | |
| Keyword(1) | ion beam irradiation |
| Keyword(2) | thin film |
| Keyword(3) | stress relaxation |
| Keyword(4) | field emitter array |
| Keyword(5) | field emission display |
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| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Tomoya Yoshida |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Masayoshi Nagao |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Takashi Shimizu |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Seigo Kanemaru |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
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| Speaker | Author-1 |
| Date Time | 2009-10-15 13:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-116 |
| Volume (vol) | vol.109 |
| Number (no) | no.230 |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2009-10-08 (ED) |
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