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Paper Abstract and Keywords
Presentation 2009-10-22 09:00
Integrated 2-bit memory elements based on bi-stability between different lateral modes using active multi-mode-interferometer (MMI) for random access memory (RAM) application
Haisong Jiang, Hany Ayad Bastawrous, Yuichiro Tahara (Kyushu Univ.), Shinji Matsuo (NTT), Kiichi Hamamoto (Kyushu Univ.) OCS2009-41 OPE2009-107 LQE2009-66
Abstract (in Japanese) (See Japanese page) 
(in English) To realize highly integrated optical memory elements for optical random access memory (RAM) application, common single–current driving condition must be realized for all the integrated devices even in case of their further downsizing. We demonstrate wide hysteresis window bi-stable laser diodes (BLDs) based on active multimode interferometer (MMI) using different lateral propagation modes. They have a superior controllability in the portion of cross-gain saturation (XGS) region length, which leads to wide hysteresis allowing common single-current driving for the integrated devices. The implemented devices showed extremely wide and uniform hysteresis windows of 32mA ± 2mA (operation current around 70mA), with rela-tively high ON/OFF ratio of 18dB in 315x600μm2 total device size.
Keyword (in Japanese) (See Japanese page) 
(in English) Active MMI / bi-stability laser diode / cross-gain saturation region / integrated memory element / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 244, OPE2009-107, pp. 1-5, Oct. 2009.
Paper # OPE2009-107 
Date of Issue 2009-10-15 (OCS, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OCS2009-41 OPE2009-107 LQE2009-66

Conference Information
Committee OPE LQE OCS  
Conference Date 2009-10-22 - 2009-10-23 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2009-10-OPE-LQE-OCS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Integrated 2-bit memory elements based on bi-stability between different lateral modes using active multi-mode-interferometer (MMI) for random access memory (RAM) application 
Sub Title (in English)  
Keyword(1) Active MMI  
Keyword(2) bi-stability laser diode  
Keyword(3) cross-gain saturation region  
Keyword(4) integrated memory element  
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1st Author's Name Haisong Jiang  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Hany Ayad Bastawrous  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Yuichiro Tahara  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Shinji Matsuo  
4th Author's Affiliation NTT Photonics Laboratories (NTT)
5th Author's Name Kiichi Hamamoto  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2009-10-22 09:00:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # OCS2009-41, OPE2009-107, LQE2009-66 
Volume (vol) vol.109 
Number (no) no.243(OCS), no.244(OPE), no.245(LQE) 
Page pp.1-5 
#Pages 5 
Date of Issue 2009-10-15 (OCS, OPE, LQE) 

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