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| Presentation | 2009-11-13 10:50 Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.)  SDM2009-144 Link to ES Tech. Rep. Archives: SDM2009-144 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. To increase short-channel saturation current, higher Ge-content (xGe) SiGe-channel is desirable because of the higher channel injection velocity (vinj), although too high xGe reduces maximum available SiGe-channel thickness, thereby degrading the low field mobility. Additional uniaxial <110> compressive strain is very effective for improving SiGe-channel device performance, since it enhances vinj without decreasing density-of-states which largely affects channel injection carrier density in short channel devices. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Strain / SiGe / SiGe-channel / full-band / Monte Carlo / carrier transport / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 278, SDM2009-144, pp. 49-53, Nov. 2009. | |
| Paper # | SDM2009-144 | |
| Date of Issue | 2009-11-05 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-144 Link to ES Tech. Rep. Archives: SDM2009-144 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2009-11-12 - 2009-11-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2009-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation |
| Sub Title (in English) | |
| Keyword(1) | Strain |
| Keyword(2) | SiGe |
| Keyword(3) | SiGe-channel |
| Keyword(4) | full-band |
| Keyword(5) | Monte Carlo |
| Keyword(6) | carrier transport |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroshi Takeda |
| 1st Author's Affiliation | NEC Electronics Corporation (NEC Electronics Corp.) |
| 2nd Author's Name | Michihito Kawada |
| 2nd Author's Affiliation | NEC Informatec Systems (NEC Informatec Systems) |
| 3rd Author's Name | Kiyoshi Takeuchi |
| 3rd Author's Affiliation | NEC Electronics Corporation (NEC Electronics Corp.) |
| 4th Author's Name | Masami Hane |
| 4th Author's Affiliation | NEC Electronics Corporation (NEC Electronics Corp.) |
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| Speaker | Author-1 |
| Date Time | 2009-11-13 10:50:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2009-144 |
| Volume (vol) | vol.109 |
| Number (no) | no.278 |
| Page | pp.49-53 |
| #Pages | 5 |
| Date of Issue | 2009-11-05 (SDM) |
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