Paper Abstract and Keywords |
Presentation |
2009-11-19 13:30
Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2009-136 CPM2009-110 LQE2009-115 Link to ES Tech. Rep. Archives: ED2009-136 CPM2009-110 LQE2009-115 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The spatially resolved photoluminescence mappings under the various carrier densities are performed to clarify the phenomena of PL intensity saturation in blue and green emitting InGaN/GaN single quantum wells (SQWs) on epitaxially laterally overgrown GaN template at room temperature by a scanning near-field microscopy (SNOM). It has been found that there is little saturation of PL intensity when the carrier density is increased in blue emitting QW. On the other hand, the PL
intensity is saturated in green emitting QW. In the blue emitting QW, the SNOM data show that while the localization states are filled by highly photogenerated carriers and/or excitons and that are diffused from localization states to delocalization ones, the capture probability to nonradiative recombination centers (NRCs) are suppressed because NRCs are surrounded by high potential barrier. However, the carrier and/or excitons are captured easily into the NRCs because they are closely correlated with lower energy band probably due to In-rich clustering in the green emitting QW and the migration from the high energy band to low energy band is enhanced under the highly photoexcited condition. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SNOM / InGaN SQW / Droop / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 290, LQE2009-115, pp. 39-42, Nov. 2009. |
Paper # |
LQE2009-115 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2009-136 CPM2009-110 LQE2009-115 Link to ES Tech. Rep. Archives: ED2009-136 CPM2009-110 LQE2009-115 |
Conference Information |
Committee |
ED LQE CPM |
Conference Date |
2009-11-19 - 2009-11-20 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2009-11-ED-LQE-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy |
Sub Title (in English) |
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Keyword(1) |
SNOM |
Keyword(2) |
InGaN SQW |
Keyword(3) |
Droop |
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1st Author's Name |
Akira Hashiya |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Akio Kaneta |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Mitsuru Funato |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Yoichi Kawakami |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2009-11-19 13:30:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2009-136, CPM2009-110, LQE2009-115 |
Volume (vol) |
vol.109 |
Number (no) |
no.288(ED), no.289(CPM), no.290(LQE) |
Page |
pp.39-42 |
#Pages |
4 |
Date of Issue |
2009-11-12 (ED, CPM, LQE) |
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