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Paper Abstract and Keywords
Presentation 2009-11-19 13:30
Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2009-136 CPM2009-110 LQE2009-115 Link to ES Tech. Rep. Archives: ED2009-136 CPM2009-110 LQE2009-115
Abstract (in Japanese) (See Japanese page) 
(in English) The spatially resolved photoluminescence mappings under the various carrier densities are performed to clarify the phenomena of PL intensity saturation in blue and green emitting InGaN/GaN single quantum wells (SQWs) on epitaxially laterally overgrown GaN template at room temperature by a scanning near-field microscopy (SNOM). It has been found that there is little saturation of PL intensity when the carrier density is increased in blue emitting QW. On the other hand, the PL
intensity is saturated in green emitting QW. In the blue emitting QW, the SNOM data show that while the localization states are filled by highly photogenerated carriers and/or excitons and that are diffused from localization states to delocalization ones, the capture probability to nonradiative recombination centers (NRCs) are suppressed because NRCs are surrounded by high potential barrier. However, the carrier and/or excitons are captured easily into the NRCs because they are closely correlated with lower energy band probably due to In-rich clustering in the green emitting QW and the migration from the high energy band to low energy band is enhanced under the highly photoexcited condition.
Keyword (in Japanese) (See Japanese page) 
(in English) SNOM / InGaN SQW / Droop / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 290, LQE2009-115, pp. 39-42, Nov. 2009.
Paper # LQE2009-115 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2009-136 CPM2009-110 LQE2009-115 Link to ES Tech. Rep. Archives: ED2009-136 CPM2009-110 LQE2009-115

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy 
Sub Title (in English)  
Keyword(1) SNOM  
Keyword(2) InGaN SQW  
Keyword(3) Droop  
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1st Author's Name Akira Hashiya  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Akio Kaneta  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Mitsuru Funato  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoichi Kawakami  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2009-11-19 13:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2009-136, CPM2009-110, LQE2009-115 
Volume (vol) vol.109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.39-42 
#Pages
Date of Issue 2009-11-12 (ED, CPM, LQE) 


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