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| Presentation | 2009-11-20 15:50 Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT)  ED2009-159 CPM2009-133 LQE2009-138 Link to ES Tech. Rep. Archives: ED2009-159 CPM2009-133 LQE2009-138 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range wireless communications to transmit large amount of data because of the HEMTs can operate at millimeter-wave (30-300 GHz) frequency band. In this contribution, we fabricated nanoscale gate Al0.29Ga0.71N/GaN HEMTs with SiN/SiO2/SiN triple-layer insulators, and measured input-output characteristics of the MIS-HEMTs. For the AlGaN/GaN MIS-HEMT with 35-nm-long and 50-μm-width T-shaped gates, we achieved high output power density of 1.07 W/mm (output power Pout = 17.3 dBm) at a frequency of 60 GHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMT / SiN/SiO2/SiN triple-layer insulators / input-output characteristic / output power density / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 288, ED2009-159, pp. 151-155, Nov. 2009. | |
| Paper # | ED2009-159 | |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2009-159 CPM2009-133 LQE2009-138 Link to ES Tech. Rep. Archives: ED2009-159 CPM2009-133 LQE2009-138 |
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| Conference Information | |
| Committee | ED LQE CPM |
| Conference Date | 2009-11-19 - 2009-11-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-11-ED-LQE-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | SiN/SiO2/SiN triple-layer insulators |
| Keyword(3) | input-output characteristic |
| Keyword(4) | output power density |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Issei Watanabe |
| 1st Author's Affiliation | National Institute of Info. and Com. Tech. (NICT) |
| 2nd Author's Name | Akira Endoh |
| 2nd Author's Affiliation | National Institute of Info. and Com. Tech. (NICT) |
| 3rd Author's Name | Yoshimi Yamashita |
| 3rd Author's Affiliation | National Institute of Info. and Com. Tech. (NICT) |
| 4th Author's Name | Nobumitsu Hirose |
| 4th Author's Affiliation | National Institute of Info. and Com. Tech. (NICT) |
| 5th Author's Name | Takashi Mimura |
| 5th Author's Affiliation | National Institute of Info. and Com. Tech./Fujitsu Laboratories Limited (NICT/Fujitsu Labs.) |
| 6th Author's Name | Toshiaki Matsui |
| 6th Author's Affiliation | National Institute of Info. and Com. Tech. (NICT) |
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| Speaker | Author-1 |
| Date Time | 2009-11-20 15:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2009-159, CPM2009-133, LQE2009-138 |
| Volume (vol) | vol.109 |
| Number (no) | no.288(ED), no.289(CPM), no.290(LQE) |
| Page | pp.151-155 |
| #Pages | 5 |
| Date of Issue | 2009-11-12 (ED, CPM, LQE) |
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