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Paper Abstract and Keywords
Presentation 2009-11-20 14:25
Large Current operation of GaN MOSFETs
Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association) ED2009-156 CPM2009-130 LQE2009-135
Abstract (in Japanese) (See Japanese page) 
(in English) A large current operation of GaN-based MOSFET on Si substrate is reported. To realize both low on-resistance and high breakdown voltage with a normally-off operation, AlGaN / GaN hetero-structure RESURF and MOS gate structure were incorporated. Threshold voltage of 2.8 V, on resistance of 16.5 mohmcm2, and breakdown voltage of 500 V were achieved in a small size device with the channel length of 200 um large size device with the channel width of 340 mm was fabricated and more than 70 A of maximum drain current was achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MOSFET / normally-off / power devices / large current operation / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 290, LQE2009-135, pp. 133-137, Nov. 2009.
Paper # LQE2009-135 
Date of Issue 2009-11-12 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2009-156 CPM2009-130 LQE2009-135

Conference Information
Committee ED LQE CPM  
Conference Date 2009-11-19 - 2009-11-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Large Current operation of GaN MOSFETs 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MOSFET  
Keyword(3) normally-off  
Keyword(4) power devices  
Keyword(5) large current operation  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takehiko Nomura  
1st Author's Affiliation Advanced Power Device Research Association (Advanced Power Device Research Association)
2nd Author's Name Hiroshi Kambayashi  
2nd Author's Affiliation Advanced Power Device Research Association (Advanced Power Device Research Association)
3rd Author's Name Yoshihiro Satoh  
3rd Author's Affiliation Advanced Power Device Research Association (Advanced Power Device Research Association)
4th Author's Name Yuki Niiyama  
4th Author's Affiliation Advanced Power Device Research Association (Advanced Power Device Research Association)
5th Author's Name Sadahiro Kato  
5th Author's Affiliation Advanced Power Device Research Association (Advanced Power Device Research Association)
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Speaker Author-1 
Date Time 2009-11-20 14:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2009-156, CPM2009-130, LQE2009-135 
Volume (vol) vol.109 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.133-137 
#Pages 5 
Date of Issue 2009-11-12 (ED, CPM, LQE) 

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