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Paper Abstract and Keywords
Presentation 2009-12-04 17:10
Characterization of defects in NiO thin films for ReRAM
Yusuke Nishi, Tatsuya Iwata, Tsunenobu Kimoto (Kyoto Univ.) SDM2009-170
Abstract (in Japanese) (See Japanese page) 
(in English) NiO thin films showing resistive switching characteristics have recently attracted extensive interest as one of the materials for ReRAM. In this study, an energy level above a valence band edge and density of defects in NiO thin films regarded as p-type semiconductors deposited on n-Si substrates were characterized by Admittance spectroscopy. The NiO1.07 thin film turned out to include a localized single defect level, whose emission time constant at room temperature and the energy level above the valence band edge were 2.3 s and about 170 meV, respectively. This energy was equivalent to the activation energy of the resistances in both initial state and high-resistance state at a Pt/NiO1.07/Pt stacking structure. Band conduction with holes thermally excited from the defect level may be dominant.
Keyword (in Japanese) (See Japanese page) 
(in English) NiO / ReRAM / defect level / / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 321, SDM2009-170, pp. 97-100, Dec. 2009.
Paper # SDM2009-170 
Date of Issue 2009-11-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2009-12-04 - 2009-12-04 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication, Evaluation for Si Related Materials, 
Paper Information
Registration To SDM 
Conference Code 2009-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of defects in NiO thin films for ReRAM 
Sub Title (in English)  
Keyword(1) NiO  
Keyword(2) ReRAM  
Keyword(3) defect level  
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1st Author's Name Yusuke Nishi  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Tatsuya Iwata  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Tsunenobu Kimoto  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2009-12-04 17:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2009-170 
Volume (vol) vol.109 
Number (no) no.321 
Page pp.97-100 
#Pages 4 
Date of Issue 2009-11-27 (SDM) 

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