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Paper Abstract and Keywords
Presentation 2009-12-11 11:25
Analysis of Stable Behavior in InAs/InP MQW DFB laser Using an OBIC Monitor
Tatsuya Takeshita, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Hiromi Oohashi (NTT Corp.) LQE2009-143
Abstract (in Japanese) (See Japanese page) 
(in English) We have realized reliable 2.3 $\micron$m wavelength InAs/InP MQW DFB lasers for trace gas monitoring applications. The estimated median lifetime exceeds 1 x $10^5$ hours during aging at an ambient temperature of 45$\degree$C and with a constant output power of 3 mW. It is clarified that the main degradation mechanism in DFB lasers with highly strained InAs quantum wells is dominated by a diffusion process as found with conventional telecommunication lasers. Furthermore, stable behavior devices with deviation from the conventional $t^0.5$ deterioration are analyzed by using the optical beam induced current (OBIC) technique. We found that a decrease in the carrier concentration of the p-type InP buried layer caused by aging leads to a decrease in the pass current and an increase in the operating current is suppressed.
Keyword (in Japanese) (See Japanese page) 
(in English) reliability / aging / semiconductor lasers / quantum well lasers / failure analysis / InAs / high strain /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 331, LQE2009-143, pp. 25-30, Dec. 2009.
Paper # LQE2009-143 
Date of Issue 2009-12-04 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2009-143

Conference Information
Committee LQE  
Conference Date 2009-12-11 - 2009-12-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2009-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Stable Behavior in InAs/InP MQW DFB laser Using an OBIC Monitor 
Sub Title (in English)  
Keyword(1) reliability  
Keyword(2) aging  
Keyword(3) semiconductor lasers  
Keyword(4) quantum well lasers  
Keyword(5) failure analysis  
Keyword(6) InAs  
Keyword(7) high strain  
Keyword(8)  
1st Author's Name Tatsuya Takeshita  
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation. (NTT Corp.)
2nd Author's Name Tomonari Sato  
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation. (NTT Corp.)
3rd Author's Name Manabu Mitsuhara  
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation. (NTT Corp.)
4th Author's Name Yasuhiro Kondo  
4th Author's Affiliation NTT Photonics Laboratories, NTT Corporation. (NTT Corp.)
5th Author's Name Hiromi Oohashi  
5th Author's Affiliation NTT Photonics Laboratories, NTT Corporation. (NTT Corp.)
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Speaker Author-1 
Date Time 2009-12-11 11:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2009-143 
Volume (vol) vol.109 
Number (no) no.331 
Page pp.25-30 
#Pages 6 
Date of Issue 2009-12-04 (LQE) 

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