Paper Abstract and Keywords |
Presentation |
2010-01-22 10:15
Simulation of Power Dissipation at MOSFET Gate Port of Class E Amplifier Shouichirou Yonekura, Taishi Matsuzaki, Tadashi Suetsugu (Fukuoka Univ.) EE2009-42 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, gate port power dissipation of class E amplifier is obtained as a function of amplitude and offset of drive signal with Pspice simulation. The gate power dissipation of MOSFET in class E amplifier with IXYS Power MOSFET DE150-102N02A was investigated with Pspice simulation. From the simulation result, the best offset level of gate signal was 8 V. The power dissipation at gate port was lower when the amplitude of gate signal was lower. However, the power efficiency of amplifier was deteriorated when the amplitude was too low. The amplitude of gate signal should be higher than 4 V in order to keep 80% efficiency in class E power stage |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Class E power amplifiers / , gate power dissipation / RF power amplifiers / zero-voltage-switching / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 109, no. 371, EE2009-42, pp. 37-40, Jan. 2010. |
Paper # |
EE2009-42 |
Date of Issue |
2010-01-14 (EE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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EE2009-42 |
Conference Information |
Committee |
EE |
Conference Date |
2010-01-21 - 2010-01-22 |
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(See Japanese page) |
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Paper Information |
Registration To |
EE |
Conference Code |
2010-01-EE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Simulation of Power Dissipation at MOSFET Gate Port of Class E Amplifier |
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Keyword(1) |
Class E power amplifiers |
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, gate power dissipation |
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RF power amplifiers |
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zero-voltage-switching |
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1st Author's Name |
Shouichirou Yonekura |
1st Author's Affiliation |
Fukuoka University (Fukuoka Univ.) |
2nd Author's Name |
Taishi Matsuzaki |
2nd Author's Affiliation |
Fukuoka University (Fukuoka Univ.) |
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Tadashi Suetsugu |
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Fukuoka University (Fukuoka Univ.) |
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Speaker |
Author-1 |
Date Time |
2010-01-22 10:15:00 |
Presentation Time |
25 minutes |
Registration for |
EE |
Paper # |
EE2009-42 |
Volume (vol) |
vol.109 |
Number (no) |
no.371 |
Page |
pp.37-40 |
#Pages |
4 |
Date of Issue |
2010-01-14 (EE) |
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