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Paper Abstract and Keywords
Presentation 2010-01-29 08:55
Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers
Takahiro Kitada, Tomoya Takahashi, Ken Morita, Toshiro Isu (Univ. of Tokushima) PN2009-51 OPE2009-189 LQE2009-171
Abstract (in Japanese) (See Japanese page) 
(in English) A GaAs$\slash$AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In$_{0.35}$Ga$_{0.65}$As barriers was grown by molecular beam epitaxy to yield planar-type optical Kerr gate switches. Time-resolved optical measurements at the cavity mode ($\lambda$ = 1.46 $\mu$m) were performed by a pump-probe method at room temperature. Although only two layers of the InAs QDs were inserted into the $\lambda$$\slash$2 cavity layer, a large transmission change caused by the absorption saturation in the resonant QDs was clearly observed. The temporal profile was dominated by a fast ($\sim$ 16 ps) decay component resulting from carrier relaxation into the nonradiative centers due to the lattice strain relaxation. The optical Kerr signal from the QD-cavity sample was 60 times larger than that of a GaAs $\lambda \slash 2$ cavity sample having no QDs. The ultrafast response time ($<$ 1 ps) of the optical Kerr signal was found to be determined by the photon lifetime in the multilayer cavity.
Keyword (in Japanese) (See Japanese page) 
(in English) All optical switch / Optical microcavity / Optical Kerr effect / III-V semiconductors / Quantum dots / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 402, OPE2009-189, pp. 85-88, Jan. 2010.
Paper # OPE2009-189 
Date of Issue 2010-01-21 (PN, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF PN2009-51 OPE2009-189 LQE2009-171

Conference Information
Committee OPE EMT LQE PN IEE-EMT  
Conference Date 2010-01-28 - 2010-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2010-01-OPE-EMT-LQE-PN 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers 
Sub Title (in English)  
Keyword(1) All optical switch  
Keyword(2) Optical microcavity  
Keyword(3) Optical Kerr effect  
Keyword(4) III-V semiconductors  
Keyword(5) Quantum dots  
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1st Author's Name Takahiro Kitada  
1st Author's Affiliation The University of Tokushima (Univ. of Tokushima)
2nd Author's Name Tomoya Takahashi  
2nd Author's Affiliation The University of Tokushima (Univ. of Tokushima)
3rd Author's Name Ken Morita  
3rd Author's Affiliation The University of Tokushima (Univ. of Tokushima)
4th Author's Name Toshiro Isu  
4th Author's Affiliation The University of Tokushima (Univ. of Tokushima)
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Speaker Author-1 
Date Time 2010-01-29 08:55:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # PN2009-51, OPE2009-189, LQE2009-171 
Volume (vol) vol.109 
Number (no) no.401(PN), no.402(OPE), no.403(LQE) 
Page pp.85-88 
#Pages 4 
Date of Issue 2010-01-21 (PN, OPE, LQE) 

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