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Paper Abstract and Keywords
Presentation 2010-02-05 16:45
Evaluation of Line-Edge Roughness in Cu/Low-k Interconnect Patterns
Atsuko Yamaguchi, D. Ryuzaki, Kenichi Takeda (Hitachi), Hiroki Kawada (Hitachi High-Tech.) SDM2009-192
Abstract (in Japanese) (See Japanese page) 
(in English) To establish the method for evaluating Cu/low-k interconnect line-edge roughness (LER), resist, low-k, and Cu/low-k samples were observed with critical dimension scanning electron microscope (CD-SEM) and electric-field enhancement caused by LER was simulated. Wedge-shaped LER was observed in the edges of low-k and Cu/low-k patterns, and simulations showed that the wedges causes serious electric-field enhancement which can degrade time-dependent dielectric breakdown (TDDB) property. To predict the risk of TDDB, inspections of the wedge angle after low-k etching and Cu CMP are found to be required as well as that of the LER degree (3sigma).
Keyword (in Japanese) (See Japanese page) 
(in English) Interconnect / Line-Edge Roughness / Time-Dependent Dielectric Breakdown / CD-SEM / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 412, SDM2009-192, pp. 59-63, Feb. 2010.
Paper # SDM2009-192 
Date of Issue 2010-01-29 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-192

Conference Information
Committee SDM  
Conference Date 2010-02-05 - 2010-02-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2010-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of Line-Edge Roughness in Cu/Low-k Interconnect Patterns 
Sub Title (in English)  
Keyword(1) Interconnect  
Keyword(2) Line-Edge Roughness  
Keyword(3) Time-Dependent Dielectric Breakdown  
Keyword(4) CD-SEM  
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1st Author's Name Atsuko Yamaguchi  
1st Author's Affiliation Hitachi Ltd. (Hitachi)
2nd Author's Name D. Ryuzaki  
2nd Author's Affiliation Hitachi Ltd. (Hitachi)
3rd Author's Name Kenichi Takeda  
3rd Author's Affiliation Hitachi Ltd. (Hitachi)
4th Author's Name Hiroki Kawada  
4th Author's Affiliation Hitachi High-Technologies corp. (Hitachi High-Tech.)
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Speaker Author-1 
Date Time 2010-02-05 16:45:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-192 
Volume (vol) vol.109 
Number (no) no.412 
Page pp.59-63 
#Pages 5 
Date of Issue 2010-01-29 (SDM) 

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