Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-02-05 13:00
Advanced Direct-CMP Process for Porous Low-k Thin Film
Hayato Korogi (Panasonic), Hiroyuki Chibahara (Renesas), S. Suzuki, M. Tsutsue (Panasonic), K. Seo (Panasonic Semiconductor Engineering), Y. Oka, K. Goto, M. Akazaw, Hiroshi Miyatake (Renesas), S. Matsumoto, T. Ueda (Panasonic) SDM2009-185
Abstract (in Japanese) (See Japanese page) 
(in English) In order to reduce the effective dielectric constant (keff) for the 32 nm technology node and beyond, Direct-CMP of a porous low-k film without a protective cap layer is required. However, the degradation of breakdown electric field (Ebd) has been one of critical issues. This study clarified that the Ebd degradation was caused by the pit defects on the surface of porous low-k film during Direct-CMP. Furthermore, we demonstrated that CMP pads with low-density micro-pores drastically reduced them and improved the Ebd degradation. In this paper, the mechanism for their reduction is also discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) Direct-CMP / Porous Low-k / Ebd / Pit defect / CMP pad / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 412, SDM2009-185, pp. 19-23, Feb. 2010.
Paper # SDM2009-185 
Date of Issue 2010-01-29 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-185

Conference Information
Committee SDM  
Conference Date 2010-02-05 - 2010-02-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2010-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Advanced Direct-CMP Process for Porous Low-k Thin Film 
Sub Title (in English)  
Keyword(1) Direct-CMP  
Keyword(2) Porous Low-k  
Keyword(3) Ebd  
Keyword(4) Pit defect  
Keyword(5) CMP pad  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hayato Korogi  
1st Author's Affiliation Panasonic Corp. (Panasonic)
2nd Author's Name Hiroyuki Chibahara  
2nd Author's Affiliation Renesas Technology Corp. (Renesas)
3rd Author's Name S. Suzuki  
3rd Author's Affiliation Panasonic Corp. (Panasonic)
4th Author's Name M. Tsutsue  
4th Author's Affiliation Panasonic Corp. (Panasonic)
5th Author's Name K. Seo  
5th Author's Affiliation Panasonic Semiconductor Engineering Co., Ltd. (Panasonic Semiconductor Engineering)
6th Author's Name Y. Oka  
6th Author's Affiliation Renesas Technology Corp. (Renesas)
7th Author's Name K. Goto  
7th Author's Affiliation Renesas Technology Corp. (Renesas)
8th Author's Name M. Akazaw  
8th Author's Affiliation Renesas Technology Corp. (Renesas)
9th Author's Name Hiroshi Miyatake  
9th Author's Affiliation Renesas Technology Corp. (Renesas)
10th Author's Name S. Matsumoto  
10th Author's Affiliation Panasonic Corp. (Panasonic)
11th Author's Name T. Ueda  
11th Author's Affiliation Panasonic Corp. (Panasonic)
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2010-02-05 13:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-185 
Volume (vol) vol.109 
Number (no) no.412 
Page pp.19-23 
#Pages 5 
Date of Issue 2010-01-29 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan