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| Presentation | 2010-02-05 15:45 Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams Akira Uedono (Tsukuba Univ.), Naoya Inoue, Y. Hayashi, K. Eguchi, T. Nakamura, Y. Hirose, Masaki Yoshimaru (STARC), Nagayasu Oshima, Toshiyuki Ohdaira, R. Suzuki (National Institute of Advanced Industrial Science and Technology)  SDM2009-190 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Defects in SiOCH/Cu damascene structures were probed using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and positron lifetime spectra were measured for samples patterned with 0.54- and 2.16-micrometer pitches. From the analysis of the annihilation properties of positronium (Ps) formed in SiOCH, it was found that the size of pores in SiOCH was decreased by the scaling. The decrease in the Ps formation probability in the sample with short pitches was also observed, and which was attributed to electron/hole traps introduced by the fabrication process of the damascene structure. It was demonstrated that monoenergetic positron beams are applicable for use in a sophisticated nondestructive-observation technique to characterize low-k films in fine-pitch Cu interconnects. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Cu / low-k / interconnect / vacancy / pore / positron annihilation / monoenergetic positron beam / | |
| Reference Info. | IEICE Tech. Rep., vol. 109, no. 412, SDM2009-190, pp. 49-52, Feb. 2010. | |
| Paper # | SDM2009-190 | |
| Date of Issue | 2010-01-29 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2009-190 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-02-05 - 2010-02-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-02-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Defects in Cu/low-k Interconnects Probed Using Monoenergetic Positron Beams |
| Sub Title (in English) | |
| Keyword(1) | Cu |
| Keyword(2) | low-k |
| Keyword(3) | interconnect |
| Keyword(4) | vacancy |
| Keyword(5) | pore |
| Keyword(6) | positron annihilation |
| Keyword(7) | monoenergetic positron beam |
| Keyword(8) | |
| 1st Author's Name | Akira Uedono |
| 1st Author's Affiliation | University of Tsukuba (Tsukuba Univ.) |
| 2nd Author's Name | Naoya Inoue |
| 2nd Author's Affiliation | Semiconductor Technology Academic Research Center (STARC) |
| 3rd Author's Name | Y. Hayashi |
| 3rd Author's Affiliation | Semiconductor Technology Academic Research Center (STARC) |
| 4th Author's Name | K. Eguchi |
| 4th Author's Affiliation | Semiconductor Technology Academic Research Center (STARC) |
| 5th Author's Name | T. Nakamura |
| 5th Author's Affiliation | Semiconductor Technology Academic Research Center (STARC) |
| 6th Author's Name | Y. Hirose |
| 6th Author's Affiliation | Semiconductor Technology Academic Research Center (STARC) |
| 7th Author's Name | Masaki Yoshimaru |
| 7th Author's Affiliation | Semiconductor Technology Academic Research Center (STARC) |
| 8th Author's Name | Nagayasu Oshima |
| 8th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (National Institute of Advanced Industrial Science and Technology) |
| 9th Author's Name | Toshiyuki Ohdaira |
| 9th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (National Institute of Advanced Industrial Science and Technology) |
| 10th Author's Name | R. Suzuki |
| 10th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (National Institute of Advanced Industrial Science and Technology) |
| Speaker | Author-1 |
| Date Time | 2010-02-05 15:45:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2009-190 |
| Volume (vol) | vol.109 |
| Number (no) | no.412 |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2010-01-29 (SDM) |
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