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Paper Abstract and Keywords
Presentation 2010-02-05 16:15
Evaluation of Dielectric Constant through Direct CMP of Porous Low-k Film
Masako Kodera, T. Takahashi, G. Mimamihaba (Toshiba Corp.) SDM2009-191
Abstract (in Japanese) (See Japanese page) 
(in English) Nanoporous materials are utilized in current devices. However, their low-k value often alters during device fabrication. In this study, we analyzed three kinds of nanoporous low-k materials that were exposed to CMP slurry, dry processing, and/or barrier sputtering. We demonstrate that k-value increase during CMP is caused by diffusion of surfactant included in the slurry through the nanoporous film, depending on characteristics of porous film and surfactant. This diffusion is explained by absorption of surfactant on sidewalls of continuous pores formed by porogen desorption while it is easily released by annealing. To the contrary, the increase of k-value during CMP after dry processing can mainly be caused not by surfactant but by moisture uptake. The detailed mechanism is discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) CMP / planarization / porous / low-k / dielectric constant / damage / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 412, SDM2009-191, pp. 53-58, Feb. 2010.
Paper # SDM2009-191 
Date of Issue 2010-01-29 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-191

Conference Information
Committee SDM  
Conference Date 2010-02-05 - 2010-02-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2010-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of Dielectric Constant through Direct CMP of Porous Low-k Film 
Sub Title (in English)  
Keyword(1) CMP  
Keyword(2) planarization  
Keyword(3) porous  
Keyword(4) low-k  
Keyword(5) dielectric constant  
Keyword(6) damage  
Keyword(7)  
Keyword(8)  
1st Author's Name Masako Kodera  
1st Author's Affiliation Toshiba Corporation. (Toshiba Corp.)
2nd Author's Name T. Takahashi  
2nd Author's Affiliation Toshiba Corporation. (Toshiba Corp.)
3rd Author's Name G. Mimamihaba  
3rd Author's Affiliation Toshiba Corporation. (Toshiba Corp.)
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Speaker Author-1 
Date Time 2010-02-05 16:15:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-191 
Volume (vol) vol.109 
Number (no) no.412 
Page pp.53-58 
#Pages 6 
Date of Issue 2010-01-29 (SDM) 

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