Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-02-05 14:00
Low resistive and highly reliable copper interconnects in combination of silicide-cap with Ti-barrier for 32 nm-node and beyond
Yumi Hayashi, Noriaki Matsunaga, Makoto Wada, Shinichi Nakao, Atsuko Sakata, Kei Watanabe, Hideki Shibata (Toshiba) SDM2009-187
Abstract (in Japanese) (See Japanese page) 
(in English) Silicide-cap for Cu interconnects is promising for enhancing electromigration (EM) performance for 32 nm-node and beyond. But the trade-off properties of silicide-cap between EM lifetime and line resistance remain to be resolved. Increasing of line resistance is caused by Si diffusion in Cu line. So, we focused on Ti barrier metal (BM), which diffuses in Cu line, and applied it in combination with silicide-cap, in order to keep Si stable at the surface of Cu line. As a result, we achieved EM median time-to-failure (MTF) 100 times longer than that of the sample w/o silicide-cap and Ta-BM while line resistance is kept lower. Activation energy (Ea) of EM of 1.45 eV is achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicide-cap / Ti barrier metal / Cu interconnects / Electromigration / / / /  
Reference Info. IEICE Tech. Rep., vol. 109, no. 412, SDM2009-187, pp. 31-36, Feb. 2010.
Paper # SDM2009-187 
Date of Issue 2010-01-29 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2009-187

Conference Information
Committee SDM  
Conference Date 2010-02-05 - 2010-02-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2010-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low resistive and highly reliable copper interconnects in combination of silicide-cap with Ti-barrier for 32 nm-node and beyond 
Sub Title (in English)  
Keyword(1) Silicide-cap  
Keyword(2) Ti barrier metal  
Keyword(3) Cu interconnects  
Keyword(4) Electromigration  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yumi Hayashi  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Noriaki Matsunaga  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Makoto Wada  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Shinichi Nakao  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Atsuko Sakata  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Kei Watanabe  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Hideki Shibata  
7th Author's Affiliation Toshiba Corporation (Toshiba)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2010-02-05 14:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2009-187 
Volume (vol) vol.109 
Number (no) no.412 
Page pp.31-36 
#Pages 6 
Date of Issue 2010-01-29 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan