Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2010-04-22 11:40
32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM)
Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5
Abstract (in Japanese) (See Japanese page) 
(in English) A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The proposed SRAM has a unique configuration to apply the body of NMOS and PMOS with VDD and VSS. During the read and the hold, the VTH of Fe-FETs automatically changes to increase the static noise margin, SNM, by 60%. During the sand-by, the VTH of the proposed SRAM cell increases to decrease the leakage current by 42%. The enlarged SNM realizes the VDD reduction by 0.11V, which decreases the active power by 32%. Since the transistor count is minimized to 6, the proposed SRAM realizes the smallest area.
Keyword (in Japanese) (See Japanese page) 
(in English) SRAM / Ferroelectric / FeFET / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 9, ICD2010-5, pp. 23-28, April 2010.
Paper # ICD2010-5 
Date of Issue 2010-04-15 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2010-5

Conference Information
Committee ICD  
Conference Date 2010-04-22 - 2010-04-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Shonan Institute of Tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2010-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM) 
Sub Title (in English)  
Keyword(1) SRAM  
Keyword(2) Ferroelectric  
Keyword(3) FeFET  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shuhei Tanakamaru  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Teruyoshi Hatanaka  
2nd Author's Affiliation University of Tokyo (Univ. of Tokyo)
3rd Author's Name Ryoji Yajima  
3rd Author's Affiliation University of Tokyo (Univ. of Tokyo)
4th Author's Name Mitsue Takahashi  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Shigeki Sakai  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Ken Takeuchi  
6th Author's Affiliation University of Tokyo (Univ. of Tokyo)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2010-04-22 11:40:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2010-5 
Volume (vol) vol.110 
Number (no) no.9 
Page pp.23-28 
#Pages 6 
Date of Issue 2010-04-15 (ICD) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan