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Paper Abstract and Keywords
Presentation 2010-04-23 11:20
Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism
Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4
Abstract (in Japanese) (See Japanese page) 
(in English) Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is required to achieve high speed thin-film transistors and high-efficiency thin-film solar cells. For this purpose, we have developed an advanced Al-induced crystallization (AIC) technique by controlling the interfacial oxide layers. As a results, homogeneous and large-grained (>10 um) AIC growth was achieved for samples with the whole Ge fractions (0-100%). In addition, we evaluated crystal orientation of the poly-SiGe and discuss the growth mechanism.
Keyword (in Japanese) (See Japanese page) 
(in English) Al-induced crystallization (AIC) / silicon germanium (SiGe) / low temperature crystallization / orientation control / thin-film transistor / thin-film solar cell / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 15, SDM2010-4, pp. 13-17, April 2010.
Paper # SDM2010-4 
Date of Issue 2010-04-16 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-4 OME2010-4

Conference Information
Committee SDM OME  
Conference Date 2010-04-23 - 2010-04-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2010-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism 
Sub Title (in English)  
Keyword(1) Al-induced crystallization (AIC)  
Keyword(2) silicon germanium (SiGe)  
Keyword(3) low temperature crystallization  
Keyword(4) orientation control  
Keyword(5) thin-film transistor  
Keyword(6) thin-film solar cell  
Keyword(7)  
Keyword(8)  
1st Author's Name Naoyuki Kawabata  
1st Author's Affiliation Kyushu University (Kyushu Univ.)
2nd Author's Name Masashi Kurosawa  
2nd Author's Affiliation Kyushu University/JSPS Research Fellow (Kyushu Univ./JSPS Research Fellow)
3rd Author's Name Taizoh Sadoh  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Masanobu Miyao  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2010-04-23 11:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-4, OME2010-4 
Volume (vol) vol.110 
Number (no) no.15(SDM), no.16(OME) 
Page pp.13-17 
#Pages 5 
Date of Issue 2010-04-16 (SDM, OME) 

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