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| Presentation | 2010-04-23 10:40 Laser-activated Top-gate μc-Si:H TFTs Akito Hara, Jun Shibuya, Tadashi Sato (Tohoku Gakuin Univ.), Kuninori Kitahara (Shimane Univ.)  SDM2010-2 OME2010-2 Link to ES Tech. Rep. Archives: SDM2010-2 OME2010-2 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The aim of this research is to realize the monolithic integration of top-gate (TG) hydrogenated microcrystalline-silicon (μc-Si:H) thin film transistors (TFTs) and TG poly-Si TFTs. In order to fabricate TG μc-Si:H TFTs, it is necessary to contain high concentration of hydrogen, which is introduced during μc-Si:H growth, in the channel region. To achieve this, we developed laser-activated TG μc-Si:H TFTs at a process temperature of 325°C and achieved a field-effect mobility of 1.1 cm2/Vs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Microcrystalline-silicon / μc-Si:H / TFT / laser activation / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 15, SDM2010-2, pp. 5-8, April 2010. | |
| Paper # | SDM2010-2 | |
| Date of Issue | 2010-04-16 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-2 OME2010-2 Link to ES Tech. Rep. Archives: SDM2010-2 OME2010-2 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2010-04-23 - 2010-04-23 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawa-Ken-Seinen-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Laser-activated Top-gate μc-Si:H TFTs |
| Sub Title (in English) | |
| Keyword(1) | Microcrystalline-silicon |
| Keyword(2) | μc-Si:H |
| Keyword(3) | TFT |
| Keyword(4) | laser activation |
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| 1st Author's Name | Akito Hara |
| 1st Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
| 2nd Author's Name | Jun Shibuya |
| 2nd Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
| 3rd Author's Name | Tadashi Sato |
| 3rd Author's Affiliation | Tohoku Gakuin University (Tohoku Gakuin Univ.) |
| 4th Author's Name | Kuninori Kitahara |
| 4th Author's Affiliation | Shimane University (Shimane Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-04-23 10:40:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2010-2, OME2010-2 |
| Volume (vol) | vol.110 |
| Number (no) | no.15(SDM), no.16(OME) |
| Page | pp.5-8 |
| #Pages | 4 |
| Date of Issue | 2010-04-16 (SDM, OME) |
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