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Paper Abstract and Keywords
Presentation 2010-04-23 17:00
Fabrication and characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film
Gwang-Geun Lee (Tokyo Inst. of Tech.), Sung-Min Yoon (ETRI), Joo-Won Yoon (Tokyo Inst. of Tech.), Yoshihisa Fujisaki (Hitachi), Hiroshi Ishiwara, Eisuke Tokumitsu (Tokyo Inst. of Tech.) SDM2010-16 OME2010-16
Abstract (in Japanese) (See Japanese page) 
(in English) Poly(vinylidene fluoride trifluoroethylene) , P(VDF-TrFE), and In-Ga-Zn-O (IGZO)were employed to fabricate nonvolatile memory thin film transistors as ferroelectric gate insulator and oxide semiconducting channel layers, respectively. First, the basic ferroelectric properties of the P(VDF-TrFE) films prepared on the ITO and Pt electrodes were confirmed and compared. Regardless of the bottom electrodes, we obtained the almost similar ferroelectric properties, including the remnant polarization and switching characteristics. Next, we fabricated ferroelectric-gate thin film transistors (Fe-TFTs) with Al/P(VDF-TrFE)(150nm)/IGZO(10nm) top-gate structure. Excellent electrical characteristics are demonstrated and nonvolatile memory function was confirmed with a memory window of 4 V. In addition, a subthreshold voltage swing of approximately 130 mV/decade and a drain current on/off ratio of more than 105 were obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) P(VDF-TrFE) / IGZO / ferroelectric / thin film transistor / nonvolatile memory / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 15, SDM2010-16, pp. 71-75, April 2010.
Paper # SDM2010-16 
Date of Issue 2010-04-16 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM OME  
Conference Date 2010-04-23 - 2010-04-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa-Ken-Seinen-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Advanced Thin-Film Devices (Si, Compound, Organic) and Related Topics 
Paper Information
Registration To SDM 
Conference Code 2010-04-SDM-OME 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film 
Sub Title (in English)  
Keyword(1) P(VDF-TrFE)  
Keyword(2) IGZO  
Keyword(3) ferroelectric  
Keyword(4) thin film transistor  
Keyword(5) nonvolatile memory  
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Keyword(7)  
Keyword(8)  
1st Author's Name Gwang-Geun Lee  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Sung-Min Yoon  
2nd Author's Affiliation Electronics And Telecommunications Res. Inst. (ETRI)
3rd Author's Name Joo-Won Yoon  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
4th Author's Name Yoshihisa Fujisaki  
4th Author's Affiliation Central Research Laboratory, Hitachi Ltd. (Hitachi)
5th Author's Name Hiroshi Ishiwara  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
6th Author's Name Eisuke Tokumitsu  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker Author-1 
Date Time 2010-04-23 17:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2010-16, OME2010-16 
Volume (vol) vol.110 
Number (no) no.15(SDM), no.16(OME) 
Page pp.71-75 
#Pages 5 
Date of Issue 2010-04-16 (SDM, OME) 

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