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Paper Abstract and Keywords
Presentation 2010-05-14 13:55
Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.) ED2010-31 CPM2010-21 SDM2010-31
Abstract (in Japanese) (See Japanese page) 
(in English) GaP layers were grown on 4° misoriented Si substrates at 700－830°C using metalorganic vapor phase epitaxy. The surface at initial growth stage was investigated using atomic force microscopy. Islands nucleated densely at temperatures above 770°C. The GaP structure changed from islands to a layer after 5－20 nm GaP deposition. Antiphase domains (APDs) were found in any sample. They induced the surface roughness of the layer. They self-annihilated during growth. A single domain surface was achieved after 40 nm deposition at 800－830°C. The coverage of APDs in the surface decreased with temperature from 830 to 800°C.
Keyword (in Japanese) (See Japanese page) 
(in English) MOVPE / GaP / Si substrate / antiphase domain / atomic force microscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 31, SDM2010-31, pp. 75-79, May 2010.
Paper # SDM2010-31 
Date of Issue 2010-05-06 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2010-31 CPM2010-21 SDM2010-31

Conference Information
Committee SDM CPM ED  
Conference Date 2010-05-13 - 2010-05-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka University (Hamamatsu Campus) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） 
Paper Information
Registration To SDM 
Conference Code 2010-05-SDM-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy 
Sub Title (in English)  
Keyword(1) MOVPE  
Keyword(2) GaP  
Keyword(3) Si substrate  
Keyword(4) antiphase domain  
Keyword(5) atomic force microscopy  
Keyword(6)  
Keyword(7)  
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1st Author's Name Yasushi Takano  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Hiroki Yamada  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Ryu Misaki  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Tatsuya Takagi  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Shunro Fuke  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2010-05-14 13:55:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2010-31, CPM2010-21, SDM2010-31 
Volume (vol) vol.110 
Number (no) no.29(ED), no.30(CPM), no.31(SDM) 
Page pp.75-79 
#Pages 5 
Date of Issue 2010-05-06 (ED, CPM, SDM) 

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