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| Presentation | 2010-05-27 13:20 CMOS Inverter Based on a Stacked Structure Using Silicone-Resin as Dielectric Layers Kodai Kikuchi, Hiroshi Yamauchi, Masaaki Iizuka, Masatoshi Sakai, Masakazu Nakamura, Kazuhiro Kudo (Chiba Univ.)  OME2010-18 Link to ES Tech. Rep. Archives: OME2010-18 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have demonstrated the inverter operation of stacked-structure CMOS devices using pentacene and ZnO as active layers. The fabrication process of the device is as follows: A top-gate-type ZnO thin-film transistor (TFT), which works as an n-channel transistor, was formed on a glass substrate. Then, a bottom-gate-type pentacene TFT, as a p-channel transistor, was formed on top of the ZnO TFT while sharing a common gate electrode. For both TFTs, solution-processed silicone-resin layers were used as gate dielectric. The stacked-structure CMOS has several advantages of, for example, easiness of active material patterning, compact device area per stage and the short length of the interconnection as compared with the planar configuration in a conventional CMOS circuit. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CMOS inverter / silicone-resin / pentacene / ZnO / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 59, OME2010-18, pp. 7-10, May 2010. | |
| Paper # | OME2010-18 | |
| Date of Issue | 2010-05-20 (OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | OME2010-18 Link to ES Tech. Rep. Archives: OME2010-18 |
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| Conference Information | |
| Committee | OME |
| Conference Date | 2010-05-27 - 2010-05-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Organic Materials, General |
| Paper Information | |
| Registration To | OME |
| Conference Code | 2010-05-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | CMOS Inverter Based on a Stacked Structure Using Silicone-Resin as Dielectric Layers |
| Sub Title (in English) | |
| Keyword(1) | CMOS inverter |
| Keyword(2) | silicone-resin |
| Keyword(3) | pentacene |
| Keyword(4) | ZnO |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Kodai Kikuchi |
| 1st Author's Affiliation | Chiba University (Chiba Univ.) |
| 2nd Author's Name | Hiroshi Yamauchi |
| 2nd Author's Affiliation | Chiba University (Chiba Univ.) |
| 3rd Author's Name | Masaaki Iizuka |
| 3rd Author's Affiliation | Chiba University (Chiba Univ.) |
| 4th Author's Name | Masatoshi Sakai |
| 4th Author's Affiliation | Chiba University (Chiba Univ.) |
| 5th Author's Name | Masakazu Nakamura |
| 5th Author's Affiliation | Chiba University (Chiba Univ.) |
| 6th Author's Name | Kazuhiro Kudo |
| 6th Author's Affiliation | Chiba University (Chiba Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-05-27 13:20:00 |
| Presentation Time | 20 minutes |
| Registration for | OME |
| Paper # | OME2010-18 |
| Volume (vol) | vol.110 |
| Number (no) | no.59 |
| Page | pp.7-10 |
| #Pages | 4 |
| Date of Issue | 2010-05-20 (OME) |
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