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Paper Abstract and Keywords
Presentation 2010-06-22 09:55
Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts
Shinji Migita, Yukinori Morita, Hiroyuki Ota (AIST) SDM2010-34
Abstract (in Japanese) (See Japanese page) 
(in English) Process technology with atomic-scale precision is indispensable for fabrication of silicon nanowire MOSFETs. We present our developments of process technologies based on atomic-scale design concepts. The first is an O2 etching technology which enables atomic-layer etching of Si surface using active oxidation condition. The second is a metal source/drain technology using epitaxial NiSi2 films prepared by a low annealing temperature. Physics of these process technologies confirm their applicability in top-down style VLSI production fields.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon Nanowire / MOSFET / O2 etching / atomic-layer etching / metal source and drain / nickel silicide / epitaxial growth / self-limiting growth  
Reference Info. IEICE Tech. Rep., vol. 110, no. 90, SDM2010-34, pp. 5-10, June 2010.
Paper # SDM2010-34 
Date of Issue 2010-06-15 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-34

Conference Information
Committee SDM  
Conference Date 2010-06-22 - 2010-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2010-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Silicon Nanowire MOSFETs through Atomic-Scale Design Concepts 
Sub Title (in English)  
Keyword(1) Silicon Nanowire  
Keyword(2) MOSFET  
Keyword(3) O2 etching  
Keyword(4) atomic-layer etching  
Keyword(5) metal source and drain  
Keyword(6) nickel silicide  
Keyword(7) epitaxial growth  
Keyword(8) self-limiting growth  
1st Author's Name Shinji Migita  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Yukinori Morita  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Hiroyuki Ota  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2010-06-22 09:55:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2010-34 
Volume (vol) vol.110 
Number (no) no.90 
Page pp.5-10 
#Pages 6 
Date of Issue 2010-06-15 (SDM) 

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