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Paper Abstract and Keywords
Presentation 2010-06-22 10:45
Nickel silicide Encroachment in Silicon Nanowire and its Suppression
Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36 Link to ES Tech. Rep. Archives: SDM2010-36
Abstract (in Japanese) (See Japanese page) 
(in English) Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence of wire shape and a surrounding oxide. We investigate the phenomenon of making to silicide through the experiment that changes the wire diameter and the annealing temperature. And, we propose the method of controlling the Ni silicide reaction. In addition, the effect of the size of the Ni silicide formation in the Si Nanowire was evaluated.
Keyword (in Japanese) (See Japanese page) 
(in English) Si nanowire / Nisilicide / Control of Ni diffusion / / / / /  
Reference Info. IEICE Tech. Rep., vol. 110, no. 90, SDM2010-36, pp. 17-22, June 2010.
Paper # SDM2010-36 
Date of Issue 2010-06-15 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2010-36 Link to ES Tech. Rep. Archives: SDM2010-36

Conference Information
Committee SDM  
Conference Date 2010-06-22 - 2010-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402 Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2010-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nickel silicide Encroachment in Silicon Nanowire and its Suppression 
Sub Title (in English)  
Keyword(1) Si nanowire  
Keyword(2) Nisilicide  
Keyword(3) Control of Ni diffusion  
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1st Author's Name Naoto Shigemori  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Soshi Sato  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Kuniyuki Kakushima  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
4th Author's Name Parhat Ahmet  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
5th Author's Name Kazuo Tsutsui  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
6th Author's Name Akira Nishiyama  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
7th Author's Name Nobuyuki Sugii  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
8th Author's Name Kenji Natori  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
9th Author's Name Takeo Hattori  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
10th Author's Name Hiroshi Iwai  
10th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker Author-1 
Date Time 2010-06-22 10:45:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2010-36 
Volume (vol) vol.110 
Number (no) no.90 
Page pp.17-22 
#Pages
Date of Issue 2010-06-15 (SDM) 


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