Paper Abstract and Keywords |
Presentation |
2010-06-22 10:45
Nickel silicide Encroachment in Silicon Nanowire and its Suppression Naoto Shigemori, Soshi Sato, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-36 Link to ES Tech. Rep. Archives: SDM2010-36 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ni silicide in the Si Nanowire shows a reaction different from the reaction with the bulk substrate from the influence of wire shape and a surrounding oxide. We investigate the phenomenon of making to silicide through the experiment that changes the wire diameter and the annealing temperature. And, we propose the method of controlling the Ni silicide reaction. In addition, the effect of the size of the Ni silicide formation in the Si Nanowire was evaluated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Si nanowire / Nisilicide / Control of Ni diffusion / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 110, no. 90, SDM2010-36, pp. 17-22, June 2010. |
Paper # |
SDM2010-36 |
Date of Issue |
2010-06-15 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2010-36 Link to ES Tech. Rep. Archives: SDM2010-36 |