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| Presentation | 2010-06-22 14:10 Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Tatsuro Maeda (AIST), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Akihiro Ohtake (NIMS), Takuya Hoshii, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo)  SDM2010-42 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improvement and power reduction when the gate length is scaled down to sub-10 nm. Combination of In-containing III-V matertials and ALD-deposited Al2O3 forms MIS interfaces with relatively low interface trap densities, allowing for the nMIS operation. In this report, we first identify the factors that possibly influence the generation and energy distribution of the interface traps at the high-k/III-V interfaces. We then discuss how the MIS properties are related to the chemical compositions and bonding structures of anions and cations at the interface. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | III-Vchannel / MISFET / interface trap / ALD / InGaAs / InP / Al2O3 / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 90, SDM2010-42, pp. 49-54, June 2010. | |
| Paper # | SDM2010-42 | |
| Date of Issue | 2010-06-15 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2010-42 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2010-06-22 - 2010-06-22 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Technology for Dielectric Thin Films for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces |
| Sub Title (in English) | |
| Keyword(1) | III-Vchannel |
| Keyword(2) | MISFET |
| Keyword(3) | interface trap |
| Keyword(4) | ALD |
| Keyword(5) | InGaAs |
| Keyword(6) | InP |
| Keyword(7) | Al2O3 |
| Keyword(8) | |
| 1st Author's Name | Tetsuji Yasuda |
| 1st Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 2nd Author's Name | Noriyuki Miyata |
| 2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 3rd Author's Name | Yuji Urabe |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Hiroyuki Ishii |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Taro Itatani |
| 5th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 6th Author's Name | Tatsuro Maeda |
| 6th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 7th Author's Name | Hisashi Yamada |
| 7th Author's Affiliation | Sumitomo Chemical (Sumitomo Chemical) |
| 8th Author's Name | Noboru Fukuhara |
| 8th Author's Affiliation | Sumitomo Chemical (Sumitomo Chemical) |
| 9th Author's Name | Masahiko Hata |
| 9th Author's Affiliation | Sumitomo Chemical (Sumitomo Chemical) |
| 10th Author's Name | Akihiro Ohtake |
| 10th Author's Affiliation | National Institute for Materials Science (NIMS) |
| 11th Author's Name | Takuya Hoshii |
| 11th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 12th Author's Name | Masafumi Yokoyama |
| 12th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 13th Author's Name | Mitsuru Takenaka |
| 13th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 14th Author's Name | Shinichi Takagi |
| 14th Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| Speaker | Author-1 |
| Date Time | 2010-06-22 14:10:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2010-42 |
| Volume (vol) | vol.110 |
| Number (no) | no.90 |
| Page | pp.49-54 |
| #Pages | 6 |
| Date of Issue | 2010-06-15 (SDM) |
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