講演抄録/キーワード |
講演名 |
2010-06-30 14:55
The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure ○Guobin Wei・Yuta Goto・Akio Ohta・Katsunori Makihara・Hideki Murakami・Seiichiro Higashi・Seiichi Miyazaki(Hiroshima Univ.) ED2010-57 SDM2010-58 エレソ技報アーカイブへのリンク:ED2010-57 SDM2010-58 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt
electrodes has been measured systematically before and after thermal anneal in different ambiences. With H2 anneal at 400ºC,
the current level in the high-resistive state (HRS) was significantly decreased while little change in the low-resistive state
(LRS) was observable. As a result, the switching ratio over 7 order of magnitude in current level was obtained. From the
analysis of current-voltage (I-V) characteristics in HRS and LRS, we found that the LRS was characterized with an ohmic
conduction while, in the HRS after H2 anneal, charge trapping became significant as a result of significant decrease in the
current level. In a separate experiment, a partial reduction of TiO2 was detected by high-resolution X-ray photoelectron
spectroscopy (XPS) measurements after switching from HRS to LRS by using a mercury probe as a top electrode, which is
associated with the filament formation. |
キーワード |
(和) |
/ / / / / / / |
(英) |
ReRAM / TiO2 / Low Temperature / H2 Anneal / Charge Trapping / / / |
文献情報 |
信学技報, vol. 110, no. 110, SDM2010-58, pp. 31-36, 2010年6月. |
資料番号 |
SDM2010-58 |
発行日 |
2010-06-23 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2010-57 SDM2010-58 エレソ技報アーカイブへのリンク:ED2010-57 SDM2010-58 |
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