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| Presentation | 2010-06-30 14:55 The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.)  ED2010-57 SDM2010-58 Link to ES Tech. Rep. Archives: ED2010-57 SDM2010-58 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt electrodes has been measured systematically before and after thermal anneal in different ambiences. With H2 anneal at 400ºC, the current level in the high-resistive state (HRS) was significantly decreased while little change in the low-resistive state (LRS) was observable. As a result, the switching ratio over 7 order of magnitude in current level was obtained. From the analysis of current-voltage (I-V) characteristics in HRS and LRS, we found that the LRS was characterized with an ohmic conduction while, in the HRS after H2 anneal, charge trapping became significant as a result of significant decrease in the current level. In a separate experiment, a partial reduction of TiO2 was detected by high-resolution X-ray photoelectron spectroscopy (XPS) measurements after switching from HRS to LRS by using a mercury probe as a top electrode, which is associated with the filament formation. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | ReRAM / TiO2 / Low Temperature / H2 Anneal / Charge Trapping / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 110, no. 110, SDM2010-58, pp. 31-36, June 2010. | |
| Paper # | SDM2010-58 | |
| Date of Issue | 2010-06-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2010-57 SDM2010-58 Link to ES Tech. Rep. Archives: ED2010-57 SDM2010-58 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2010-06-30 - 2010-07-02 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Inst. of Tech. Ookayama Campus |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2010-06-ED-SDM |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure |
| Sub Title (in English) | |
| Keyword(1) | ReRAM |
| Keyword(2) | TiO2 |
| Keyword(3) | Low Temperature |
| Keyword(4) | H2 Anneal |
| Keyword(5) | Charge Trapping |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Guobin Wei |
| 1st Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 2nd Author's Name | Yuta Goto |
| 2nd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 3rd Author's Name | Akio Ohta |
| 3rd Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 4th Author's Name | Katsunori Makihara |
| 4th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 5th Author's Name | Hideki Murakami |
| 5th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 6th Author's Name | Seiichiro Higashi |
| 6th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Hiroshima University (Hiroshima Univ.) |
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| Speaker | Author-1 |
| Date Time | 2010-06-30 14:55:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2010-57, SDM2010-58 |
| Volume (vol) | vol.110 |
| Number (no) | no.109(ED), no.110(SDM) |
| Page | pp.31-36 |
| #Pages | 6 |
| Date of Issue | 2010-06-23 (ED, SDM) |
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